THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32508, SiP32509
www.vishay.com
Vishay Siliconix
LIMIT
-0.3 to +6
-0.3 to +6
-0.3 to +6
3
c
c
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Input Voltage (V
IN
)
Enable Input Voltage (V
EN
)
Output Voltage (V
OUT
)
Maximum Continuous Switch Current (I max.)
c
Maximum Repetitive Pulsed Current (1 ms, 10 % Duty Cycle)
ESD Rating (HBM)
Junction Temperature (T
J
)
Thermal Resistance (
JA
)
a
UNIT
V
6
12
>8
-40 to +150
150
833
A
kV
°C
°C/W
mW
Maximum Non-Repetitive Pulsed Current (100 μs, EN = Active)
Power Dissipation (P
D
)
a, b
Notes
a. Device mounted with all leads soldered or welded to PC board, see PCB layout.
b. Derate 6.66 mW/°C above T
A
= 25 °C, see PCB layout.
c. T
A
= 25 °C, see PCB layout
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
PARAMETER
Input Voltage Range (V
IN
)
Operating Junction Temperature Range (T
J
)
LIMIT
1.1 to 5.5
-40 to +125
UNIT
V
°C
SPECIFICATIONS
PARAMETER
Operating Voltage
c
SYMBOL
V
IN
TEST CONDITIONS UNLESS SPECIFIED
V
IN
= 5 V, T
A
= -40 °C to +85 °C
(typical values are at T
A
= 25 °C)
V
IN
= 1.2 V, EN = active
V
IN
= 1.8 V, EN = active
V
IN
= 2.5 V, EN = active
V
IN
= 3.6 V, EN = active
V
IN
= 4.3 V, EN = active
V
IN
= 5 V, EN = active
LIMITS
-40 °C to +85 °C
MIN.
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
UNIT
a
TYP.
-
10.5
21
34
54
68
105
-
-
-
47
44
44
44
44
46
b
MAX.
5.5
17
30
50
90
110
180
1
1
10
54
52
52
52
52
52
-
V
Quiescent Current
I
Q
μA
Off Supply Current
Off Switch Current
Reverse Blocking Current
I
Q(off)
I
DS(off)
I
RB
EN = inactive, OUT = open
EN = inactive, OUT = GND
V
OUT
= 5 V, V
IN
= 0 V, V
EN
= inactive
V
IN
= 1.2 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 1.8 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 2.5 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 3.6 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 4.3 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 5 V, I
L
= 100 mA, T
A
= 25 °C
On-Resistance
R
DS(on)
m
On-Resistance Temp.-Coefficient
TC
RDS
3570
ppm/°C
S16-0319-Rev. B, 29-Feb-16
Document Number: 62754
2
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32508, SiP32509
www.vishay.com
Vishay Siliconix
TEST CONDITIONS UNLESS SPECIFIED
V
IN
= 5 V, T
A
= -40 °C to +85 °C
(typical values are at T
A
= 25 °C)
V
IN
= 1.2 V
V
IN
= 1.8 V
V
IN
= 2.5 V
V
IN
= 3.6 V
V
IN
= 4.3 V
V
IN
= 5 V
V
IN
= 1.2 V
V
IN
= 1.8 V
V
IN
= 2.5 V
V
IN
= 3.6 V
V
IN
= 4.3 V
V
IN
= 5 V
LIMITS
-40 °C to +85 °C
MIN.
-
-
-
-
-
-
0.9
d
1.2
d
1.4
d
a
SPECIFICATIONS
PARAMETER
SYMBOL
UNIT
a
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
217
1.8
2.5
-
b
MAX.
0.3
0.4
d
0.5
d
0.6
d
0.7
d
0.8
d
-
-
-
-
-
-
1
280
-
3.8
EN Input Low Voltage
c
V
IL
V
EN Input High Voltage
c
V
IH
1.6
d
1.7
d
1.8
-1
-
-
1.2
-
EN Input Leakage
Output Pulldown Resistance
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
I
SINK
R
PD
t
d(on)
t
(on)
t
d(off)
V
EN
= 5.5 V
EN = inactive, T
A
= 25 °C, (for SiP32509 only)
V
IN
= 3.6 V, R
load
= 10
,
T
A
= 25 °C
μA
ms
0.001
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For V
IN
outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
PIN CONFIGURATION
1
6
2
5
3
Top View
4
Fig. 2 - TSOT23-6 Package
PIN DESCRIPTION
PIN NUMBER
1, 2
3
4
5, 6
NAME
OUT
EN
GND
IN
FUNCTION
These are output pins of the switch
Enable input
Ground connection
These are input pins of the switch
S16-0319-Rev. B, 29-Feb-16
Document Number: 62754
3
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32508, SiP32509
www.vishay.com
BLOCK DIAGRAM
Reverse
Blocking
IN
OUT
Vishay Siliconix
Charge
Pump
EN
Control
Logic
Turn On
Slew Rate Control
GND
Fig. 3 - Functional Block Diagram
TYPICAL CHARACTERISTICS
(internally regulated, 25 °C, unless otherwise noted)
140
120
I
Q
-
Quiescent
Current (μA)
100
80
60
40
20
0
1
1.5
2
2.5
3.5
3
V
IN
(V)
4
4.5
5
5.5
120
V
IN
= 5 V
100
I
Q
-
Quiescent
Current (μA)
80
60
V
IN
= 3.6 V
40
20
V
IN
= 1.2 V
0
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 4 - Quiescent Current vs. Input Voltage
0.7
0.6
I
Q(OFF)
- Off
Supply
Current (nA)
0.5
0.4
0.3
0.2
0.1
0.0
1
1.5
2
2.5
3
3.5
V
IN
(V)
4
4.5
5
5.5
I
IQ(OFF)
- Off
Supply
Current (nA)
Fig. 6 - Quiescent Current vs. Temperature
100
10
V
IN
= 5 V
V
IN
= 3.6 V
1
0.1
0.01
V
IN
= 1.2 V
0.001
0.0001
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 5 - Off Supply Current vs. Input Voltage
Fig. 7 - Off Supply Current vs. Temperature
S16-0319-Rev. B, 29-Feb-16
Document Number: 62754
4
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiP32508, SiP32509
www.vishay.com
TYPICAL CHARACTERISTICS
(internally regulated, 25 °C, unless otherwise noted)
1.2
1.1
I
DS(off)
- Off
Switch
Current (nA)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
1.5
2
2.5
3
3.5
V
IN
(V)
4
4.5
5
5.5
0.001
- 40
- 20
1000
Vishay Siliconix
I
DS(off)
- Off
Switch
Current (nA)
100
10
1
V
IN
= 3.6 V
0.1
V
IN
= 5 V
0.01
V
IN
= 1.2 V
0
20
40
60
Temperature (°C)
80
100
Fig. 8 - Off Switch Current vs. Input Voltage
Fig. 11 - Off Switch Current vs. Temperature
58
56
54
R
DS
- On-Resistance (mΩ)
52
50
48
46
44
42
40
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
IN
(V)
I
O
= 0.1 A
I
O
= 1.5 A
I
O
= 1.0 A
I
O
= 2.5 A
I
O
= 2.0 A
R
DS
- On-Resistance (mΩ)
60
I
O
= 0.1 A
V
IN
= 5 V
55
50
45
40
35
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 9 - R
DS(on)
vs. V
IN
Fig. 12 - R
DS(on)
vs. Temperature
600
550
500
R
DS
- On-Resistance (mΩ)
450
400
350
300
250
200
150
100
50
1.0
1.5
2.0
2.5
3.0 3.5
V
IN
(V)
4.0
4.5
5.0
5.5
SiP32509
only
280
270
R
DS
- On-Resistance (mΩ)
260
250
240
230
220
210
200
- 40
SiP32509
only
V
OUT
= V
IN
= 5V
V
OUT
= V
IN
- 20
0
20
40
60
Temperature (°C)
80
100
Fig. 10 - Output Pull Down vs. V
IN
Fig. 13 - Output Pull Down vs. Temperature
S16-0319-Rev. B, 29-Feb-16
Document Number: 62754
5
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ABI Research最近评选并公布了全球超高频无源和高频无源 RFID芯片的前十大制造商。 前十大超高频无源芯片制造商是： 前十大高频无源芯片制造商是： 超高频的得奖名单并不出人意外，因为实际上似乎总是前三家公司获得大订单。ABI分析家 Mike Liard称，ABI很容易就评选出 Alien、Avery,和 Raflatac为全球...[详细]
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