Load Switch, PA Switch and Battery Switch for Portable
Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
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G
R
S
D
2
5
D
Marking Code
BPX
Part # code
XXX
G
3
4
S
Top
View
Ordering Information:
Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Lot Traceability
and Date code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 12
± 10
- 4
a
- 4
a
- 4
a, b, c
- 4
a, b, c
- 25
- 2.3
- 1.3
b, c
2.8
1.8
1.6
b, c
1.0
b, c
- 55 to 150
260
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
www.vishay.com
1
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
New Product
Si1401EDH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 4.5 V, I
D
= - 5.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 4.8 A
V
GS
= - 1.8 V, I
D
= - 1.4 A
V
GS
= - 1.5 V, I
D
= - 0.9 A
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 5.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 5.5 A, V
GS
= 0 V
- 0.85
27
12
10
17
T
C
= 25 °C
- 2.3
- 25
- 1.2
50
25
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 1.4
I
D
- 4.4 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 6 V, R
L
= 1.4
I
D
- 4.4 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.08
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 5.5 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 5.5 A
24
14.1
1.9
4
0.42
160
420
1325
985
72
210
2100
1015
0.84
240
630
1990
1480
110
320
3150
1525
ns
k
36
22
nC
g
fs
V
DS
= - 6 V, I
D
= - 5.5 A
- 15
0.028
0.038
0.053
0.072
16
0.034
0.046
0.070
0.110
S
- 0.4
- 12
- 5.2
2.5
-1
±5
±1
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
New Product
Si1401EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.1
10
-3
10
-4
0.08
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-5
10
-6
10
-7
T
J
= 25 °C
10
-8
10
-9
0
10
-10
T
J
= 150 °C
0.06
0.04
0.02
0
3
6
9
12
15
0
3
6
9
12
15
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
25
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
Gate Current vs. Gate-Source Voltage
5
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
15
V
GS
= 2 V
3
T
C
= 25 °C
10
2
5
V
GS
= 1.5 V
1
T
C
= 125 °C
T
C
= - 55 °C
0
0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0
0.4
0.8
1.2
1.6
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.10
V
GS
= 1.5 V
8
I
D
= 5.5 A
V
GS
= 1.8 V
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
R
DS(on)
- On-Resistance (Ω)
6
V
DS
= 3 V
V
DS
= 6 V
4
V
DS
= 9.6 V
2
0.06
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
0.02
0.00
0
5
10
15
20
25
I
D
- Drain Current (A)
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
www.vishay.com
3
New Product
Si1401EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
V
GS
= - 4.5 V; I
D
= - 5.5 A
10
R
DS(on)
- On-Resistance
(Normalized)
100
1.3
I
S
- Source Current (A)
1
T
J
= 150 °C
1.1
T
J
= 25 °C
0.1
T
J
= - 50 °C
0.9
0.01
V
GS
= - 2.5 V; I
D
= - 4.8 A
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7
- 50
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.12
I
D
= 5.5 A
Source-Drain Diode Forward Voltage
30
24
R
DS(on)
- On-Resistance (Ω)
0.09
18
0.06
T
J
= 125 °C
Power (W)
12
0.03
T
J
= 25 °C
6
0.00
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
0
0.001
0.01
0.1
Time (s)
1
10
On-Resistance vs. Gate-to-Source Voltage
0.80
100
Single Pulse Power, Junction-to-Ambient
0.65
I
D
= - 250 μA
V
GS(th)
(V)
I
D
- Drain Current (A)
Limited by R
DS(on)
*
10
100 μs
1 ms
0.50
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.35
0.1
0.20
- 50
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
T
J
- Junction Temperature (°C)
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
New Product
Si1401EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
I
D
- Drain Current (A)
6
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
1.2
4
0.9
3
Power (W)
0.6
Power (W)
2
0.3
1
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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