GT60M324
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT60M324
Consumer Application
Voltage Resonance Inverter Switching Application
Sixth Generation IGBT
•
•
•
•
•
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : t
f
=
0.11μs (typ.) (I
C
=
60A)
FRD : t
rr
=
0.8μs (typ.) (di/dt
= −20
A/μs)
Low saturation voltage: V
CE (sat)
=1.70V
(typ.) (I
C
=
60A)
High Junction temperature : T
j
= 175℃ (max)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
DC
1ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FP
P
C
T
j
T
stg
Rating
900
±
25
60
120
15
120
254
175
−40
to 175
Unit
V
V
A
JEDEC
A
⎯
⎯
2-16C1C
Diode forward current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature
JEITA
TOSHIBA
W
°C
°C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a
device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device
with due consideration to the temperature rise of IGBT.
Marking
Equivalent Circuit
Collector
TOSHIBA
60M324
Part No. (or abbreviation code)
Lot No.
Note 1
Gate
Note 1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council
of 8 June 2011 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
Emitter
Start of commercial production
2011-05
1
2013-11-01
GT60M324
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Symbol
I
GES
I
CES
V
GE (OFF)
Test Condition
V
GE
=
±25 V, V
CE
=
0
V
CE
=
900 V, V
GE
=
0
I
C
=
60 mA, V
CE
=
5 V
I
C
=
10 A, V
GE
=
15 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
30 A, V
GE
=
15 V
I
C
=
60 A, V
GE
=
15 V
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal Resistance
Thermal Resistance
(IGBT)
(Diode)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
Rth(j-c)
Rth(j-c)
I
F
=
15 A, V
GE
=
0
I
F
=
15 A, V
GE
=
0, di/dt
= −
20 A/μs
⎯
⎯
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Resistive Load
V
CC
=
600 V, I
C
=
60 A
V
GG
=
±15 V, R
G
=
51
Ω
(Note 2)
Min
⎯
⎯
4.5
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1.10
1.40
1.70
3600
0.19
0.31
0.11
0.60
1.3
0.8
⎯
⎯
Max
±
500
1.0
7.5
1.60
1.85
2.00
⎯
pF
V
Unit
nA
mA
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.22
μs
⎯
1.9
⎯
0.59
4.0
V
µs
°C/W
°C/W
Note 2: Switching time measurement circuit and input/output waveforms
V
GE
0
10Ω
R
G
0
V
CC
0
V
CE
90%
10%
I
C
90%
10%
t
f
t
off
10%
t
r
t
on
90%
2
2013-11-01
GT60M324
I
C
– V
CE
120
Common emitter
Tc
= −40°C
10
20
80
8.5
60
120
15
9
100
Common emitter
Tc
=
25°C
20
80
I
C
– V
CE
15
10
9
8.5
100
(A)
Collector current IC
Collector current IC
(A)
60
8
40
VGE
=7.5
V
40
8
20
V
GE
=
7.5 V
0
0
1
2
3
4
5
20
0
0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
I
C
– V
CE
120
Common emitter
Tc
=
150°C
120
10
20
9
8.5
15
80
8
100
Common emitter
VGE
=
15 V
I
C
– V
CE
100
150
(A)
(A)
80
Collector current IC
Collector current IC
25
Tc=-40℃
60
VGE
=
7.5 V
60
40
40
20
20
0
0
1
2
3
4
5
0
0
1
2
3
4
Collector-emitter voltage
VCE (V)
Collector -emitter voltage
VCE (V)
V
CE (sat)
– Tc
4
120
Common emitter
VGE
=
15 V
3
100
80
2
60
40
Common emitter
VCE
=
5 V
I
C
– V
GE
Collector-emitter saturation voltage
V
CE
(sat) (V)
(A)
Collector current IC
80
60
40
120
100
1
IC
=20
A
25
−40
Tc
=
150°C
20
0
−75
−25
25
75
125
175
0
2
4
6
8
10
12
Case temperature Tc (°C)
Gate-emitter voltage
VGE (V)
3
2013-11-01
GT60M324
V
CE,
V
GE
– Q
G
200
Common emitter
RL
=
5
Ω
Tc
=
25°C
16
10000
5000
Cies
C – V
CE
V
CE
(V)
(pF)
Capacitance C
150
12
V
GE
(V)
3000
1000
500
300
Coes
100
50
30
Common emitter
VGE = 0
f = 1MHz
Tc = 25°C
1
Cres
Collector-emitter voltage
100
VCE
=
150 V
8
50
50
100
4
Gate-emitter voltage
0
0
80
160
240
0
320
10
0.1
10
100
1000
Gate charge Q
G
(nC)
Collector-emitter voltage V
CE
(V)
Switching Time – R
G
10
Common emitter
5 VCC
=
600 V
3 IC
=
60 A
VGG
= ±15
V
Tc
=
25°C
1
10
5
3
toff
Switching Time – I
C
Common emitter
VCC
=
600 V
RG
=
51
Ω
VGG
= ±15
V
Tc
=
25°C
toff
ton
tr
0.1
0.05
0.03
tf
Switching time (μs)
Switching time (μs)
1000
ton
tr
1
0.5
0.3
0.5
0.3
tf
0.1
0.05
0.03
0.01
1
10
100
0.01
0
10
20
30
40
50
60
70
Gate resistance
R
G
(Ω)
Collector current I
C
(A)
Safe Operating Area
Transient thermal impedance(Junction−case)
rth(j−c) (°C/W)
1000
500
300
*:
Single non-repetitive
pulse Tc
=
25°C
Curves must be derated linearly with
increases in temperature.
IC max (pulsed)
*
100
μs*
50
IC max
30 (continuous)
10
5
3
DC operation
1 ms*
10 ms*
10
μs*
10
2
r
th (j−c )
– t
w
Tc
=
25°C
(A)
10
1
Diode stage
0
IGBT stage
100
Collector current I
C
10
1
10
−
10
−
2
1
1
10
100
1000
3
10
−
5
−
10
10
−
4
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
Collector-emitter voltage
V
CE
(V)
Pulse width
t
w
(s)
4
2013-11-01
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