74VHCT125AFT,74VHCT126AFT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHCT125AFT,74VHCT126AFT
1. Functional Description
• Quad Bus Buffer, Non-Inverted 3-State Outputs
74VHCT125AFT:QUAD BUS BUFFER
74VHCT126AFT:QUAD BUS BUFFER
2. General
The 74VHCT125AFT and 74VHCT126AFT are high speed CMOS QUAD BUS BUFFERs fabricated with silicon
gate C
2
MOS technology.
They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
The 74VHCT125AFT requires the 3-state control input G to be set high to place the output into the high impedance
state, whereas the 74VHCT126AFT requires the control input G to be set low to place the output into high
impedance.
The input voltage are compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3 V to 5 V system.
Input protection and output circuit ensure that 0 to 5.5 V can be applied to the input and output
(Note)
pins without
regard to the supply voltage. There structure prevents device destruction due to mismatched supply and input/
output voltages such as battery back up, hot board insertion, etc.
Note: Output in off-state
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: Propagation delay time = 3.8 ns (typ.) at V
CC
= 5.0 V
Quiescent supply current: I
CC
= 4.0
µA
(max) at T
a
= 25
Compatible with TTL input: V
IL
= 0.8 V(max)
V
IH
= 2.0 V(min)
Power down protection is provided on all inputs and outputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Low noise: V
OLP
= 0.8 V (max)
Pin and function compatible with the 74 series
(ACT/HCT/AHCT etc.) 125/126 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Start of commercial production
©2017 Toshiba Corporation
1
2013-01
2017-02-22
Rev.4.0
74VHCT125AFT,74VHCT126AFT
4. Packaging
TSSOP14B
5. Pin Assignment
74VHCT125AFT
74VHCT126AFT
6. Marking
74VHCT125AFT
74VHCT126AFT
7. IEC Logic Symbol
74VHCT125AFT
74VHCT126AFT
©2017 Toshiba Corporation
2
2017-02-22
Rev.4.0
74VHCT125AFT,74VHCT126AFT
8. Truth Table
Input G
(74VHCT125AFT)
H
L
L
Input G
(74VHCT126AFT)
L
H
H
Input A
X
L
H
Output Y
Z
L
H
X:
Z:
Don't care
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 4)
(Note 3)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
180
-65 to 150
mA
mA
mA
mA
mW
Unit
V
V
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in OFF state.
Note 2: High (H) or Low (L) state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
Note 4: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
(Note 1)
(Note 2)
Note
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 20
ns/V
Unit
V
V
V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 1: Output in OFF state.
Note 2: High (H) or Low (L) state.
Note:
©2017 Toshiba Corporation
3
2017-02-22
Rev.4.0
74VHCT125AFT,74VHCT126AFT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply
current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.94
Typ.
4.5
0.0
Max
0.8
0.1
0.36
±0.25
±0.1
4.0
1.35
0.5
µA
µA
µA
mA
µA
V
Unit
V
V
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply
current
Quiescent supply
current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.80
Max
0.8
0.1
0.44
±2.50
±1.0
40.0
1.50
5.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply
current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.4
3.70
Max
0.8
0.1
0.55
±10.0
±2.0
80.0
1.50
20.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
©2017 Toshiba Corporation
4
2017-02-22
Rev.4.0
74VHCT125AFT,74VHCT126AFT
11.4. AC Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
3-state output enable time
3-state output disable time
Output skew
Input capacitance
Output capacitance
Power dissipation
capacitance
74VHCT125AFT
74VHCT126AFT
Part Number
Symbol
t
PLH
,t
PHL
t
PZL
,t
PZH
t
PLZ
,t
PHZ
t
osLH
,t
osHL
(Note 1)
C
IN
C
OUT
C
PD
(Note 2)
Note
Test
Condition
V
CC
(V)
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
C
L
(pF)
15
50
R
L
= 1 kΩ
R
L
= 1 kΩ
15
50
50
50
Min
Typ.
3.8
5.3
3.6
5.1
6.1
4
6
14
15
Max
5.5
7.5
5.1
7.1
8.8
1.0
10
ns
ns
pF
pF
pF
ns
Unit
ns
Note 1: Parameter guaranteed by design. (t
osLH
= |t
PLH
m-t
PLH
n|, t
osHL
= |t
PHL
m-t
PHL
n|)
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/4 (per gate)
11.5. AC Characteristics
(Unless otherwise specified, T
a
= -40 to 85
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
3-state output enable time
3-state output disable time
Output skew
Input capacitance
Symbol
t
PLH
,t
PHL
t
PZL
,t
PZH
t
PLZ
,t
PHZ
t
osLH
,t
osHL
C
IN
(Note 1)
Note
Test
Condition
V
CC
(V)
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
C
L
(pF)
15
50
R
L
= 1 kΩ
R
L
= 1 kΩ
15
50
50
50
Min
1.0
1.0
1.0
1.0
1.0
Max
6.5
8.5
6.0
8.0
10.0
1.0
10
ns
ns
pF
ns
Unit
ns
Note 1: Parameter guaranteed by design. (t
osLH
= |t
PLH
m-t
PLH
n|, t
osHL
= |t
PHL
m-t
PHL
n|)
11.6. AC Characteristics
(Unless otherwise specified, T
a
= -40 to 125
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
3-state output enable time
3-state output disable time
Output skew
Input capacitance
Symbol
t
PLH
,t
PHL
t
PZL
,t
PZH
t
PLZ
,t
PHZ
t
osLH
,t
osHL
C
IN
(Note 1)
Note
Test
Condition
V
CC
(V)
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
5.0
±
0.5
C
L
(pF)
15
50
R
L
= 1 kΩ
R
L
= 1 kΩ
15
50
50
50
Min
1.0
1.0
1.0
1.0
1.0
Max
7.0
9.5
6.5
9.0
11.0
1.0
10
ns
ns
pF
ns
Unit
ns
Note 1: Parameter guaranteed by design. (t
osLH
= |t
PLH
m-t
PLH
n|, t
osHL
= |t
PHL
m-t
PHL
n|)
11.7. Noise Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 3 ns)
Characteristics
Quiet output maximum dynamic V
OL
Quiet output minimum dynamic V
OL
Minimum high-level dynamic input voltage
Maximum low-level dynamic input voltage
Symbol
V
OLP
V
OLV
V
IHD
V
ILD
Test Condition
C
L
= 50 pF
C
L
= 50 pF
C
L
= 50 pF
C
L
= 50 pF
V
CC
(V)
5.0
5.0
5.0
5.0
Typ.
0.5
-0.5
Limit
0.8
-0.8
2.0
0.8
Unit
V
©2017 Toshiba Corporation
5
2017-02-22
Rev.4.0
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