TBD62783APG/FG/FNG/FWG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62783APG, TBD62783AFG, TBD62783AFNG, TBD62783AFWG
8channel source type DMOS transistor array
TBD62783A series are DMOS transistor array with 8
circuits. It has a clamp diode for switching inductive loads
built-in in each output. Please be careful about thermal
conditions during use.
TBD62783APG
Features
8 circuits built-in
•
High voltage
•
High current
•
:
V
OUT
= 50 V (MAX)
:
I
OUT
= -500 mA
(MAX for each channel)
•
Input voltage(output on)
:
2.0 V (MIN)
•
Input voltage(output off)
:
0.6 V (MAX)
•
Package
:
PG type
P-DIP18-300-2.54-001
P-DIP18-300-2.54-001
TBD62783AFG
FG type
SOP18-P-375-1.27
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
TBD62783AFNG
Pin connection (top view)
TBD62783AFWG
Pin connection may be simplified for explanatory purpose.
P-SOP18-0812-1.27-001
Weight
P-DIP18-300-2.54-001
SOP18-P-375-1.27
SSOP18-P-225-0.65
P-SOP18-0812-1.27-001
:
1.3g (Typ.)
:
0.41g (Typ.)
:
0.09g (Typ.)
:
0.48g (Typ.)
1
© 2016 TOSHIBA Corporation
2016-05-11
TBD62783APG/FG/FNG/FWG
Pin explanations
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Pin name
I1
I2
I3
I4
I5
I6
I7
I8
VCC
GND
O8
O7
O6
O5
O4
O3
O2
O1
Function
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Power supply pin
GND pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Equivalent circuit (each driver)
VCC
Clamp
INPUT
Clamp
OUTPUT
Clamp
diode
Equivalent circuit may be simplified for explanatory purpose.
2
2016-05-11
TBD62783APG/FG/FNG/FWG
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
Output current
(for each channel)
Input voltage
Clamp diode reverse voltage
Clamp diode forward current
PG (Note1)
FG (Note2)
Power
dissipation
FNG (Note3)
FWG (Note4)
Operating temperature
Storage temperature
Symbol
V
CC
I
OUT
V
IN
V
R
I
F
P
D
T
opr
T
stg
Rating
−0.5
to 50
−500
−0.5
to 30
50
500
1.47
0.96
0.96
1.31
−40
to 85
−55
to 150
Unit
V
mA
V
V
mA
W
°C
°C
Note1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note2: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.
Note3: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.
Note4: On PCB (Size: 75 mm
×
114 mm
×
1.6 mm, Cu area: 20%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C.
3
2016-05-11
TBD62783APG/FG/FNG/FWG
Operating Ranges (Ta = −40 to 85°C)
Characteristics
Power supply voltage
PG
(Note1)
Symbol
V
CC
Condition
I
OUT
=
-100 mA
1 circuits ON, Ta
=
25°C
Duty
=
10%
t
pw
=
25 ms
8 circuits ON
Ta
=
85°C
Duty
=
50%
T
j
=
120°C
1 circuits ON, Ta
=
25°C
Duty
=
10%
t
pw
=
25 ms
8 circuits ON
Ta
=
85°C
Duty
=
50%
T
j
=
120°C
1 circuits ON, Ta
=
25°C
Duty
=
10%
t
pw
=
25 ms
8 circuits ON
Ta
=
85°C
Duty
=
50%
T
j
=
120°C
1 circuits ON, Ta
=
25°C
t
pw
=
25 ms
Duty
=
10%
8 circuits ON
Ta
=
85°C
Duty
=
50%
T
j
=
120°C
V
IN (ON)
V
IN (OFF)
I
F
I
OUT
=
-100 mA or upper, V
DS
= 2.0 V
I
OUT
=
-100
μA
or less, V
DS
= 2.0 V
―
Min
2.0
0
0
0
0
0
0
0
0
0
0
0
0
2.0
0
―
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Max
50
-400
-390
-170
-400
-320
-140
-400
-320
-140
-400
-370
-160
25
0.6
400
V
V
mA
mA
Unit
V
Output
current
(for each
channel)
FG
(Note1)
I
OUT
FNG
(Note2)
FWG
(Note3)
Input voltage
(Output on)
Input voltage
(Output off)
Clamp diode
forward current
Note1: Device alone.
Note2: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40%, single-side glass epoxy).
Note3: On PCB (Size: 75 mm
×
114 mm
×
1.6 mm, Cu area: 20%, single-side glass epoxy).
4
2016-05-11
TBD62783APG/FG/FNG/FWG
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics
Output leakage current
Symbol
I
leak
Test
Circuit
1
Condition
V
CC
= 50 V, V
IN
= 0 V
Ta = 85°C
I
OUT
= -350 mA
V
IN
= 5.0 V, V
CC
= 5.0 V
Output voltage
(Output ON-resistance)
V
DS
(R
ON
)
2
I
OUT
= -200 mA
V
IN
= 5.0 V, V
CC
= 5.0 V
I
OUT
= -100 mA
V
IN
= 5.0 V, V
CC
= 5.0 V
Input current (Output on)
I
IN (ON)
3
4
5
3
6
7
8
V
IN
= 2.0 V
V
IN
= 0 V, Ta = 85°C
I
OUT
= -100 mA or upper
V
DS
= 2.0 V
V
IN
= 2.0 V, V
CC
= 50 V
Output open
V
R
= 50 V, Ta = 85°C
I
F
= 350 mA
V
CC
= 50 V
R
L
= 125
Ω
C
L
= 15 pF
Input current (Output off) I
IN (OFF)
Input voltage (Output on) V
IN (ON)
Supply current
(for each channel)
Clamp diode
reverse current
Clamp diode
forward voltage
Turn−on delay
Turn−off delay
I
CC
I
R
V
F
t
ON
t
OFF
Min
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
―
0.56
(1.6)
0.32
(1.6)
0.16
(1.6)
―
―
―
―
―
―
0.4
2.0
Max
1.0
1.14
(3.25)
0.65
(3.25)
0.325
(3.25)
0.1
1.0
2.0
1.5
1.0
2.0
―
―
μs
mA
μA
V
mA
μA
V
V
(Ω)
Unit
μA
5
2016-05-11
微控制器 MCU
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