FMBM5551 — NPN General-Purpose Amplifier
FMBM5551
NPN General-Purpose Amplifier
Features
• This device has matched dies
• Sourced from process 16
• See MMBT5551 for characteristics
C2
E1
C1
C2
B2
E1
B2
E2
pin #1 B1
E2
SuperSOT
TM
-6
Mark: .3S2
Dot denotes pin #1
C1
B1
Figure 1. Device Package
Figure 2. Internal Connection
Ordering Information
Part Number
FMBM5551
Top Mark
3S2
Package
SSOT 6L
Packing Method
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Parameter
Value
160
180
6
600
150
-55 to 150
Unit
V
V
V
mA
°C
°C
Storage Temperature Range
© 2005
Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FMBM5551/D
FMBM5551 — NPN General-Purpose Amplifier
Thermal Characteristics
(1), (2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Derate Above 25°C
Parameter
Power Dissipation (T
C
= 25°C)
Thermal Resistance, Junction-to-Ambient
Value
0.7
5.6
180
Unit
W
mW/°C
°C/W
Notes:
1. P
D
total, for both transistors. For each transistor, P
D
= 350 mW.
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE1
DIVID1
h
FE2
DIVID2
h
FE3
DIVID3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
DEL
C
ob
C
ib
f
T
NF
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Variation Ratio of h
FE1
Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h
FE2
Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h
FE3
Between Die 1 and Die 2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Difference of V
BE
(on)
Between Die1 and Die 2
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Conditions
I
C
= 100
μA,
I
E
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 120 V, I
E
= 0
V
CB
= 120 V, I
E
= 0, T
A
= 100°C
V
EB
= 4 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
h
FE1
(Die1) / h
FE1
(Die2)
V
CE
= 5 V, I
C
= 10 mA
h
FE2
(Die1) / h
FE2
(Die2)
V
CE
= 5 V, I
C
= 50 mA
h
FE3
(Die1) / h
FE3
(Die2)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 10 mA
V
BE
(on)(Die1) - V
BE
(on)(Die2)
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 10 mA,
f = 100 MHz
V
CE
= 5 V, I
C
= 200
μA,
f = 1 MHz, R
S
= 20 kΩ,
B = 200 Hz
V
CE
= 10 V, I
C
= 1.0 mA,
f = 10 kHz
Min.
160
180
6
Max.
Unit
V
V
V
Collector-Emitter Breakdown Voltage I
C
= 1 mA, I
B
= 0
50
50
50
80
0.9
80
0.95
30
0.9
1.1
0.15
0.20
1
1
1
-8
8
6
20
100
300
1.1
250
1.05
nA
μA
nA
V
V
V
mV
pF
pF
MHz
Noise Figure
8
dB
h
fe
Small Signal Current Gain
50
250
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FMBM5551 — NPN General-Purpose Amplifier
Typical Performance Characteristics
h
FE
- TYP ICAL PULSED CURRE NT GAIN
vs Collector Current
250
200
150
25 °C
125 °C
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
Voltage vs Collector Current
0.5
0.4
β
0.3
β
= 10
β
100
- 40 °C
β
β
25 °C
0.2
125
°C
50
0
0.1
V
C E
= 5V
β
0.1
0
- 40
°C
0.2
0.5
1
2
5
10
20
I
C
- COLLECTOR CURRENT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
β
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
1
0.8
0.6
0.4
0.2
0
β
= 10
β
β
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
β
Voltage vs Collector Current
- 40
°C
Collector Current
1
0.8
- 40
°C
25 °C
β
125
°C
0.6
0.4
0.2
0
0.1
25 °C
125
°C
V
CE
= 5V
1
10
100
I - COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
100 200
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base-Emitter On Voltage
vs. Collector Current
I
CBO
- COLLE CTOR CURRENT (nA)
50
V
CB
= 100V
BV
CER
- BREAKDOWN VOLTAGE (V)
Between Emitter-Base
260
I
C
= 1.0 mA
240
10
220
200
Ω
180
Ω
Ω
1
1
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
160
0.1
Ω
10
Ω
RESISTANCE (k
Ω
)
100
1000
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature
Figure 8. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
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FMBM5551 — NPN General-Purpose Amplifier
Typical Performance Characteristics
(Continued)
h
FE
- SMALL SIGNAL CURRENT GAIN
vs Collector Current
16
FREG = 20 MHz
V
CE
= 10V
30
f = 1.0 MHz
25
CAPACITANCE (pF)
12
20
15
8
10
C
ib
C
cb
1
10
100
4
5
0
0.1
0
1
V
CE
- COLLECTOR VOLTAGE (V)
10
I
C
- COLLECTOR CURRENT (mA)
50
Figure 9. Input and Output Capacitance
vs. Reverse Voltage
Figure 10. Small Signal Current Gain
vs. Collector Current
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FMBM5551 — NPN General-Purpose Amplifier
Physical Dimensions
Figure 11. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE
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