MC14020B
14-Bit Binary Counter
The MC14020B 14−stage binary counter is constructed with MOS
P−Channel and N−Channel enhancement mode devices in a single
monolithic structure. This part is designed with an input wave shaping
circuit and 14 stages of ripple−carry binary counter. The device
advances the count on the negative−going edge of the clock pulse.
Applications include time delay circuits, counter controls, and
frequency−dividing circuits.
Features
http://onsemi.com
•
•
•
•
•
•
•
•
•
Fully Static Operation
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low−power TTL Loads or One Low−power
Schottky TTL Load Over the Rated Temperature Range
Buffered Outputs Available from stages 1 and 4 thru 14
Common Reset Line
Pin−for−Pin Replacement for CD4020B
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SOIC−16
D SUFFIX
CASE 751B
TSSOP−16
DT SUFFIX
CASE 948F
PIN ASSIGNMENT
Q12
Q13
Q14
Q6
Q5
Q7
Q4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
Q11
Q10
Q8
Q9
R
C
Q1
MAXIMUM RATINGS
(Voltages Referenced to V
SS
)
Symbol
V
DD
V
in
, V
out
I
in
, I
out
P
D
T
A
T
stg
T
L
Parameter
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
Input or Output Current
(DC or Transient) per Pin
Power Dissipation, per Package
(Note 1)
Ambient Temperature Range
Storage Temperature Range
Lead Temperature
(8−Second Soldering)
Value
−0.5 to +18.0
−0.5 to V
DD
+ 0.5
±10
500
−55 to +125
−65 to +150
260
Unit
V
V
V
SS
MARKING DIAGRAMS
16
mA
mW
°C
°C
°C
1
16
1
14020BG
AWLYWW
SOIC−16
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
≤
(V
in
or V
out
)
≤
V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
A
WL, L
YY, Y
WW, W
G or
G
14
020B
ALYWG
G
TSSOP−16
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Indicator
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 9
Publication Order Number:
MC14020B/D
MC14020B
ELECTRICAL CHARACTERISTICS
(Voltages Referenced to V
SS
)
−55_C
Characteristic
Output Voltage
V
in
= V
DD
or 0
“0” Level
Symbol
V
OL
V
DD
Vdc
5.0
10
15
5.0
10
15
5.0
10
15
“1” Level
(V
O
= 0.5 or 4.5 Vdc)
(V
O
= 1.0 or 9.0 Vdc)
(V
O
= 1.5 or 13.5 Vdc)
Output Drive Current
(V
OH
= 2.5 Vdc)
(V
OH
= 4.6 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
(V
OL
= 0.4 Vdc)
(V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
Input Current
Input Capacitance
(V
in
= 0)
Quiescent Current
(Per Package)
Total Supply Current (Notes 3 & 4)
(Dynamic plus Quiescent,
Per Package)
(C
L
= 50 pF on all outputs, all
buffers switching)
I
OH
Source
5.0
5.0
10
15
I
OL
5.0
10
15
15
−
5.0
10
15
5.0
10
15
–3.0
–0.64
–1.6
–4.2
0.64
1.6
4.2
−
−
−
−
−
−
−
−
−
−
−
−
±0.1
−
5.0
10
20
–2.4
–0.51
–1.3
–3.4
0.51
1.3
3.4
−
−
−
−
−
–4.2
–0.88
–2.25
–8.8
0.88
2.25
8.8
±0.00001
5.0
0.005
0.010
0.015
−
−
−
−
−
−
−
±0.1
7.5
5.0
10
20
–1.7
–0.36
–0.9
–2.4
0.36
0.9
2.4
−
−
−
−
−
−
−
−
−
−
−
−
±1.0
−
150
300
600
mAdc
V
IH
5.0
10
15
3.5
7.0
11
−
−
−
3.5
7.0
11
2.75
5.50
8.25
−
−
−
3.5
7.0
11
−
−
−
mAdc
Min
−
−
−
4.95
9.95
14.95
−
−
−
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
Min
−
−
−
4.95
9.95
14.95
−
−
−
25_C
Typ
(Note 2)
0
0
0
5.0
10
15
2.25
4.50
6.75
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
125_C
Min
−
−
−
4.95
9.95
14.95
−
−
−
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
Vdc
Unit
Vdc
“1” Level
V
in
= 0 or V
DD
Input Voltage
(V
O
= 4.5 or 0.5 Vdc)
(V
O
= 9.0 or 1.0 Vdc)
(V
O
= 13.5 or 1.5 Vdc)
“0” Level
V
OH
Vdc
V
IL
Vdc
Sink
I
in
C
in
I
DD
mAdc
pF
mAdc
I
T
I
T
= (0.42
mA/kHz)f
+ I
DD
I
T
= (0.85
mA/kHz)f
+ I
DD
I
T
= (1.43
mA/kHz)f
+ I
DD
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
I
T
(C
L
) = I
T
(50 pF) + (C
L
– 50) Vfk
where: I
T
is in
mA
(per package), C
L
in pF, V = (V
DD
– V
SS
) in volts, f in kHz is input frequency, and k = 0.001.
http://onsemi.com
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
