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PESDxS1UB series
ESD protection diodes in SOD523 package
Rev. 02 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one
transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and
other transients.
1.2 Features
I
I
I
I
I
I
I
Unidirectional ESD protection of one line
Max. peak pulse power: P
PP
= 330 W at t
p
= 8/20
µs
Low clamping voltage: V
CL
= 20 V at I
PP
= 18 A
Ultra low leakage current: I
RM
< 700 nA
ESD protection > 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 18 A at t
p
= 8/20
µs
1.3 Applications
I
I
I
I
I
Computers and peripherals
Communication systems
Audio and video equipment
Data lines
CAN bus protection
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
3.3
5
12
15
24
V
V
V
V
V
Conditions
Value
Unit
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
Quick reference data
…continued
Parameter
diode capacitance
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
number of protected
lines
Conditions
V
R
= 0 V; f = 1 MHz
207
152
38
32
23
1
pF
pF
pF
pF
pF
Value
Unit
Table 1.
Symbol
C
d
2. Pinning information
Table 2.
Pin
1
2
Discrete pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym035
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESDxS1UB
SC -79
Description
plastic surface mounted package; 2 leads
Version
SOD523
Type number
4. Marking
Table 4.
Marking
Marking code
N1
N2
N3
N4
N5
Type number
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
2 of 15
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
I
PP
peak pulse current
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
T
j
T
amb
T
stg
[1]
Conditions
8/20
µs
[1]
Min
-
-
-
-
-
Max
330
260
180
160
160
18
15
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
8/20
µs
[1]
-
-
-
-
-
-
−65
−65
junction temperature
operating ambient
temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponentially decay waveform; see
Figure 1.
Table 6.
Symbol
ESD
ESD maximum ratings
Parameter
electrostatic discharge
capability
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
PESDxS1UB series
HBM MIL-STD883
Conditions
IEC 61000-4-2
(contact discharge)
[1]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Figure 2.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2, level 4 (ESD)
HBM MIL-STD883, class 3
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
3 of 15
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
4 of 15
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