PESD5V0X1BCAL
6 June 2018
Extremely low capacitance bidirectional ESD protection
diode
Product data sheet
1. General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to
protect one signal line from the damage caused by ESD and other transients. The combination of
extremely low capacitance, high ESD maximum rating and ultra small package makes the device
ideal for high-speed data line protection.
2. Features and benefits
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Extremely low capacitance: C
d
= 0.85 pF
Low clamping voltage: V
CL
= 17 V
Ultra low leakage current: I
RM
= 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
Computers and peripherals
Audio and video equipment
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
SIM card protection
USB, High-Definition Multimedia Interface (HDMI), FireWire
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RWM
C
d
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
0.85
Max
5.5
0.95
Unit
V
pF
Nexperia
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K1
K2
cathode (diode 1)
cathode (diode 2)
1
2
Simplified outline
Graphic symbol
K1
sym045
K2
Transparent
top view
DFN1006-2 (SOD882)
6. Ordering information
Table 3. Ordering information
Type number
PESD5V0X1BCAL
Package
Name
DFN1006-2
Description
Version
plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
PESD5V0X1BCAL
Marking code
NN
PESD5V0X1BCAL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 June 2018
2 / 11
Nexperia
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2; air discharge
IEC 61000-4-2; contact discharge
machine model
MIL-STD-883 (human body model)
[1]
[2]
Conditions
t
p
= 8/20 µs
[1]
Min
-
-
-55
-65
[2]
[2]
-
-
-
-
Max
1.8
150
150
150
15
15
400
10
Unit
A
°C
°C
°C
kV
kV
V
kV
ESD maximum ratings
Device stressed with ten non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5 and
IEC 61643-321)
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
001aaa631
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0X1BCAL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 June 2018
3 / 11
Nexperia
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
V
CL
R
dyn
[1]
[2]
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
clamping voltage
dynamic resistance
Conditions
T
amb
= 25 °C
I
R
= 10 mA; T
amb
= 25 °C
V
RWM
= 5.5 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PPM
= 1.8 A; T
amb
= 25 °C
I
R
= 10 A; T
amb
= 25 °C
[1]
[2]
Min
-
8.1
-
-
-
-
Typ
-
9.8
1
0.85
-
0.5
Max
5.5
12.3
10
0.95
17
-
Unit
V
V
nA
pF
V
Ω
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
1.0
C
d
(pF)
0.9
006aac886
I
PPM
I
PP
0.8
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.7
0.6
-
+
0.5
0
1
2
3
4
V
R
(V)
5
-I
PP
-I
PPM
006aab325
f = 1 MHz; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 4.
V-I characteristics for a bidirectional ESD
protection diode
PESD5V0X1BCAL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 June 2018
4 / 11
Nexperia
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
Cs
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10x
ATTENUATOR
50 Ω
IEC 61000-4-2 network
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 20 V/div
horizontal scale = 10 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 10 ns/div
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aac887
Fig. 5.
ESD clamping test setup and waveforms
PESD5V0X1BCAL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 June 2018
5 / 11
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