PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
Rev. 03 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect two data lines from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
I
I
I
I
Bidirectional ESD protection of two lines
Low diode capacitance
Max. peak pulse power: P
PP
= 130 W at t
p
= 8/20
µs
Low clamping voltage: V
CL
= 14 V at I
PP
= 12 A
Ultra low leakage current: I
RM
= 5 nA at V
RWM
= 5 V
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 12 A at t
p
= 8/20
µs
1.3 Applications
I
I
I
I
I
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz;
V
R
= 0 V
Conditions
Min
-
-
Typ
-
35
Max
5
45
Unit
V
pF
NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode 1
cathode 2
double cathode
1
2
2
sym031
Simplified outline
3
Graphic symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0S2BT -
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking
Marking code
[1]
*G5
Type number
PESD5V0S2BT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
−65
−65
Max
130
12
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform.
Measured from pin 1 to 3 or pin 2 to 3.
PESD5V0S2BT_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 February 2009
2 of 12
NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
[1][2]
Table 6.
Symbol
V
ESD
Min
-
-
Max
30
10
Unit
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or pin 2 to 3.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0S2BT_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 February 2009
3 of 12
NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
6. Characteristics
Table 8.
Electrical characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
CL
V
BR
r
dif
C
d
[1]
[2]
Parameter
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Conditions
Min
-
Typ
-
5
-
-
-
-
35
Max
5
100
10
14
9.5
50
45
Unit
V
nA
V
V
V
Ω
pF
V
RWM
= 5 V
I
PP
= 1 A
I
PP
= 12 A
I
R
= 1 mA
I
R
= 1 mA
f = 1 MHz; V
R
= 0 V
[1][2]
[1][2]
-
-
-
5.5
-
-
Non-repetitive current pulse 8/20
µs
exponential decay waveform.
Measured from pin 1 to 3 or pin 2 to 3.
10
3
001aaa632
1.2
P
PP
001aaa633
P
PP
(W)
P
PP(25°C)
0.8
10
2
0.4
10
1
10
10
2
10
3
t
p
(µs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
t
p
= 8/20
µs
exponential decay waveform
Fig 3.
Peak pulse power dissipation as a function of
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0S2BT_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 February 2009
4 of 12
NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
38
C
d
(pF)
34
001aaa634
10
2
I
R
I
R(85
°C)
10
001aaa635
30
1
26
22
0
1
2
3
4
V
R
(V)
5
10
−1
75
100
125
T
j
(
°
C)
150
T
amb
= 25
°C;
f = 1 MHz
I
R
< 1 nA measured at T
amb
= 25
°C
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Relative variation of reverse current as a
function of junction temperature; typical
values
PESD5V0S2BT_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 February 2009
5 of 12
stm32/stm8
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