PESD1LIN
LIN-bus ESD protection diode
Rev. 3 — 31 May 2011
Product data sheet
1. Product profile
1.1 General description
PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic
package designed to protect one automotive Local Interconnect Network (LIN) bus line
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features and benefits
ESD protection of one automotive LIN-bus line
Asymmetrical diode configuration ensures an optimized protection against
ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)
Max. peak pulse power: P
PP
= 160 W at t
p
= 8/20
s
Low clamping voltage: V
CL
= 40 V at I
PP
= 1 A
Ultra low leakage current: I
RM
< 1 nA
ESD protection of up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3 A at t
p
= 8/20
s
AEC-Q101 qualified
1.3 Applications
LIN-bus protection
Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
C
d
diode capacitance
V
R
= 0 V;
f = 1 MHz
-
-
-
-
-
13
15
24
17
V
V
pF
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD1LIN
LIN-bus ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode 1 (15 V)
cathode 2 (24 V)
1
2
1
2
006aab041
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD1LIN
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
PESD1LIN
Marking codes
Marking code
AM
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
65
65
Max
160
3
150
+150
+150
Unit
W
A
C
C
C
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
PESD1LIN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 31 May 2011
2 of 12
NXP Semiconductors
PESD1LIN
LIN-bus ESD protection diode
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
[1]
Table 6.
Symbol
V
ESD
Min
-
-
Max
23
10
Unit
kV
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD1LIN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 31 May 2011
3 of 12
NXP Semiconductors
PESD1LIN
LIN-bus ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
I
RM
reverse leakage current
PESD1LIN (15 V)
PESD1LIN (24 V)
V
BR
breakdown voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
C
d
V
CL
diode capacitance
clamping voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
r
dif
differential resistance
PESD1LIN (15 V)
PESD1LIN (24 V)
[1]
Conditions
Min
-
-
Typ
-
-
<1
<1
18.9
27.8
13
-
-
-
-
-
-
Max
15
24
50
50
20.3
30.3
17
25
44
40
70
225
300
Unit
V
V
nA
nA
V
V
pF
V
V
V
V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
-
-
17.1
25.4
V
R
= 0 V; f = 1 MHz
[1]
-
-
-
-
-
-
-
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 1 mA
I
R
= 1 mA
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
10
4
P
PP
(W)
10
3
006aaa164
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
2
0.4
10
1
10
10
2
10
3
t
p
(μs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
C
Fig 3.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
© NXP B.V. 2011. All rights reserved.
PESD1LIN
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 31 May 2011
4 of 12
NXP Semiconductors
PESD1LIN
LIN-bus ESD protection diode
ESD TESTER
R
Z
C
Z
D.U.T.
(Device
Under
Test)
450
Ω
RG 223/U
50
Ω
coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50
Ω
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD1LIN (24V)
GND
PESD1LIN (15V)
GND
GND
unclamped
+1
kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
+1
kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
PESD1LIN (15V)
GND
PESD1LIN (24V)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
clamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa166
Fig 5.
ESD clamping test setup and waveforms
PESD1LIN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 31 May 2011
5 of 12
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