UNISONIC TECHNOLOGIES CO., LTD
10N80
10A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
10N80
uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 1.1Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 45nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 15pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N80G-TC3-T
10N80L-TF2-T
10N80G-TF2-T
Package
TO-3P
TO-230
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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QW-R502-218.J
10N80
MARKING INFORMATION
PACKAGE
MARKING
Power MOSFET
TO-3P/TO-230/TO-220F2
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QW-R502-218.J
10N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current (T
C
= 25°С)
I
D
10
A
Pulsed Drain Current (Note 2)
I
DM
40
A
Avalanche Current (Note 2)
I
AR
10
A
920
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
TO-230
W
Power Dissipation
156
TO-220F2
66
P
D
TO-3P
1.92
Linear Derating Factor above T
C
= 25°С TO-230
W/°С
1.25
TO-220F2
0.528
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, I
AS
=10A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤
10 A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
40
62.5
0.52
0.8
1.89
UNIT
°С/W
°С/W
PARAMETER
TO-3P
Junction to Ambient
TO-220F2/TO-230
TO-3P
TO-230
Junction to Case
TO-220F2
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10N80
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
800
10
100
±100
0.98
3.0
0.9
5.0
1.1
V
µA
nA
V/°С
V
Ω
pF
pF
pF
V
GS
=0 V, I
D
=250 µA
V
DS
=800V, V
GS
=0 V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Gate-Body Leakage Current
I
GSS
V
DS
=0 V, V
GS
= ±30 V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5.0A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=10.0A,
R
G
=25Ω (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=10.0A (Note 1,2)
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0 A,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, dI
F
/dt = 100 A/µs,
I
S
= 10.0A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Independent of operating temperature.
2150 2800
180 230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
ns
nC
1.4
10.0
V
A
40.0
730
10.9
ns
nC
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10N80
TEST CIRCUIT
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
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QW-R502-218.J
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