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DTB543XETL

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-75A, EMT3, 3 PIN
产品类别晶体管   
文件大小48KB,共2页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准  
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DTB543XETL概述

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-75A, EMT3, 3 PIN

DTB543XETL规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
零件包装代码SC-75A
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性BUILT IN BIAS RESISTOR RATIO 2.1
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压12 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)140
JESD-30 代码R-PDSO-G3
JESD-609代码e1
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)0.15 W
认证状态Not Qualified
表面贴装YES
端子面层TIN SILVER COPPER
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)260 MHz
Base Number Matches1

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DTB543XE / DTB543XM
Transistors
-500mA / -12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTB543XE / DTB543XM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
External dimensions
(Unit : mm)
DTB543XE
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
(2)
(1)
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X33
DTB543XM
0.2
0.8
1.2
1.2
0.32
(3)
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : X33
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Packaging specifications
Package
EMT3
Taping
VMT3
Taping
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
Limits
DTB543XE DTB543XM
−12
−12
to
+7
−500
150
150
−55
to
+150
Unit
V
V
mA
mW
C
C
Part No.
DTB543XE
DTB543XM
Packaging type
Code
Basic ordering
unit (pieces)
TL
3000
T2L
8000
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Equivalent circuit
Typ.
−70
260
4.7
2.1
Max.
−0.3
−300
−1.4
−500
6.11
2.6
Unit
V
mV
mA
nA
MHz
kΩ
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−20mA
I
O
/I
I
=
−100mA
/
−5mA
V
I
=
−5V
V
CC
=
−12V,
V
I
=0V
V
O
=
−2V,
I
O
=
−100mA
V
CE
=
−10V,
I
E
=5mA, f=100MHz
IN
GND(+)
OUT
IN
R
2
GND(+)
R
1
OUT
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−2.5
140
3.29
1.7
R
1
=4.7kΩ / R
2
=10kΩ
1/1

 
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