MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
0.120(3.04)
40 Volt
POWER
225 mWatt
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: S2A
Top View
3
Collector
1
BASE
3
COLLECTOR
0.004(0.10)
0.000(0.00)
0.013(0.35)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-40
-40
-5
-200
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Operating Junction Temperature and Storage Temperature Range
Symbol
P
TOT
R
θ
JA
T
J
,T
STG
Value
330
375
-55 to 150
Units
mW
O
C/W
O
C
Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.
March 30,2015-REV.02
PAGE . 1
MMBT3906
ELECTRICAL CHARACTERISTICS
P a r a me t e r
Co lle c t o r - E mit t e r B r e a k d o w n
Vo lt a g e
Co lle c t o r - B a s e B r e a k d o w n
Vo lt a g e
E mit t e r - B a s e B r e a k d o w n Vo lt a g e
B a s e Cut o f f Cur r e nt
Co lle c t o r Cut o f f Cur r e nt
Sy mb o l
V
( B R)
CE O
V
( B R)
CB O
V
( BR )
E BO
I
BL
I
CE X
Te s t Co nd it io n
I C= - 1 mA, I B = 0
I C= - 1 0 uA, I E = 0
I E = - 1 0 uA , I C= 0
V CE= - 3 0 V, V E B = - 3 V
V CE= - 3 0 V, V E B = - 3 V
I C= - 0 . 1 mA , V CE = - 1 V
I C= - 1 mA, V CE = - 1 V
I C= - 1 0 mA , V CE = - 1 V
I C= - 5 0 mA , V CE = - 1 V
I C= - 1 0 0 mA , V CE= - 1 V
I C= - 1 0 mA , I B= - 1 mA
I C= - 5 0 mA , I B= - 5 mA
I C= - 1 0 mA , I B= - 1 mA
I C= - 5 0 mA , I B= - 5 mA
V CB= - 5 V, I E = 0 , f = 1 M Hz
V EB = - 0 . 5 V, I C= 0 , f = 1 M Hz
V
CC
= - 3 V, V
B E
= - 0 . 5 V,
I
C
= - 1 0 mA , I
B
= - 1 mA
V
CC
= - 3 V, V
B E
= - 0 . 5 V,
I
C
= - 1 0 mA , I
B
= - 1 mA
V CC= - 3 V, I C= - 1 0 mA
I B 1 = I B 2 = - 1 mA
V CC= - 3 V, I C= - 1 0 mA
I B 1 = I B 2 = - 1 mA
I
C
= - 1 0 mA , V
CE
= - 2 0 V,
f = 1 0 0 M Hz
M I N.
- 40
- 40
-5
-
-
60
80
100
60
30
-
- 0.65
-
-
-
-
-
-
-
250
TY P.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-50
-50
-
-
300
-
-
- 0.25
-0.4
- 0.85
- 0.95
4.5
10
35
35
225
75
-
Unit s
V
V
V
nA
nA
DC Cur r e nt G a in ( No t e 2 )
h
FE
-
Co lle c t o r - E mit t e r S a t ur a t io n
Vo lt a g e ( No t e 2 )
B a s e - Emit t e r S a t ur a t io n Vo lt a g e
( No t e 2 )
Co lle c t o r - B a s e Ca p a c it a nc e
E mit t e r - B a s e Ca p a c it a nc e
De la y Time
Ris e Time
S t o r a g e Time
F a ll Time
Cur r e nt G a in- Ba nd w id t h P r o d uc t
V
CE ( S AT )
V
B E( SAT)
C
CB O
C
EBO
td
tr
ts
tf
f
T
V
V
pF
pF
ns
ns
ns
ns
M Hz
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
W
-0 .5 V
0
< 1ns
300 ns
-10.9V
10K
W
C S * < 4pF
D elay and R ise Tim e Equivalent Test C ircuit
+3V
< 1ns
+9 .1V
0
10 to 500us
Duty Cycle ~ 2.0%
- 1 0.9V
10K
W
1N 916
275
W
C S * < 4pF
Storage and Fall Tim e Equivalent Test Circuit
March 30,2015-REV.02
PAGE . 2
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