NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK6A6BA
PDFN 5x6P
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
40V
R
DS(ON)
8mΩ
I
D
42A
D
D
D
D
G
S
#1 S
S
S
G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Continuous Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
D
I
AS
E
AS
P
D
P
D
T
j
, T
stg
LIMITS
40
±20
42
26.6
100
11
9
33.7
56.8
31
12.5
2.3
1.5
-55 to 150
mJ
W
A
UNITS
V
V
Power Dissipation
W
°C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Case
1
2
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
54
4
UNITS
°C / W
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
REV 1.0
1
E-39-5
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK6A6BA
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 32V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 11A
V
GS
= 10V, I
D
= 11A
V
DS
= 5V, I
D
= 11A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
g
C
iss
C
oss
C
rss
R
g
V
GS
= 10V
V
GS
= 4.5V
LIMITS
UNIT
MIN TYP MAX
40
1.3
1.8
2.3
±100
1
10
6.4
5.5
55
12
8
V
nA
A
mΩ
S
1672
V
GS
= 0V, V
DS
= 15V, f = 1MHz
206
124
V
GS
= 0V, V
DS
= 0V, f = 1MHz
1.3
34
V
DS
= 15V , V
GS
= 10V,
I
D
= 11A
18
5.1
8.3
pF
Ω
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
25
V
DS
= 15V ,
I
D
11A, V
GS
= 10V, R
GEN
=6Ω
11
41
12
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
I
S
V
SD
t
rr
Q
rr
I
F
= 11A, V
GS
= 0V
I
F
= 11A, dl
F
/dt = 100A /
S
19.5
9.4
24
1.3
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.0
2
E-39-5
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK6A6BA
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
40
Transfer Characteristics
40
I
D
, Drain-To-Source Current(A)
I
D
, Drain-To-Source Current(A)
32
24
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
32
24
16
VGS=3V
‐20℃
16
8
8
125℃
0
25℃
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
2.2
2.0
2000
1800
Capacitance Characteristic
CISS
Normalized Drain to Source
ON-Resistance
C , Capacitance(pF)
VGS=10V
ID=11A
-50
-25
0
25
50
75
100
125
150
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1600
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
COSS
CRSS
30
T
J
, Junction Temperature(˚C)
V
DS
, Drain-To-Source Voltage(V)
Gate charge Characteristics
10
Source-Drain Diode Forward Voltage
100
V
GS
, Gate-To-Source Voltage(V)
V
DS
=20V
I
D
=11A
8
I
S
, Source Current(A)
150℃
10
6
4
1
25℃
2
0
0
7
14
21
28
35
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
REV 1.0
3
E-39-5
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK6A6BA
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
Single Pulse Maximum Power Dissipation
80
Single Pulse
RθJA = 54˚C/W
TA=25˚C
↓
64
I
D
, Drain Current(A)
1ms
1
10ms
100ms
0.1
NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA = 54˚C/W
4.Single Pulse
0.1
1
10
Power(W)
10
48
32
16
DC
0
0.001
0.01
100
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
0.2
Notes
0.1
0.1
0.05
0.02
0.01
1.Duty cycle, D= t1 / t2
2.RthJA = 54
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
0.0001
single pulse
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
4
E-39-5
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