NIKO-SEM
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
D
PK537BA
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
-30V
R
DS(ON)
8mΩ
I
D
-38A
D1 D1 D1 D1
G
S
#1 S1 S1 S1 G1
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
L = 0.1mH
T
C
= 25 °C
Power Dissipation
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction & Storage Temperature Range
T
j
, T
stg
P
D
I
DM
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
LIMITS
-30
±25
-38
-24
-12
-10
-100
-37
68.4
20
8.3
2.3
1.4
-55 to 150
°C
W
mJ
A
UNITS
V
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Case
1
2
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
54
6
UNITS
°C / W
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25° C. The value in any given application depends on the user's specific board design.
REV1.0
1
F-32-5
NIKO-SEM
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
PK537BA
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25
°C,
Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
GS
= 0V, I
D
= -250A
V
DS
= V
GS
, I
D
= -250A
V
DS
= 0V, V
GS
= ±25V
V
DS
= -24V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V, T
J
= 125 °C
V
GS
= -4.5V, I
D
= -12A
V
GS
= -10V, I
D
= -12A
V
DS
= -5V, I
D
= -12A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
iss
C
oss
C
rss
Rg
Q
g(VGS=-10V)
Q
g(VGS=-4.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25
°C)
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
LIMITS
MIN
TYP MAX
UNIT
-30
-1
-1.6
-3
±100
-1
-10
8.9
5.9
40
14
8
V
nA
uA
mΩ
S
Drain-Source On-State
Resistance
1
Forward Transconductance
1
2464
V
GS
= 0V, V
DS
= -15V, f = 1MHz
374
271
V
GS
= 0V, V
DS
= 0V, f = 1MHz
3.9
60
V
DS
=-15V, I
D
= -12A
27.6
8
13.6
22
V
DS
= -15V,
I
D
-12A, V
GS
= -10V, R
GS
= 6Ω
25
100
75
nS
nC
pF
Ω
I
S
V
SD
t
rr
Q
rr
I
F
= -12A, V
GS
= 0V
I
F
= -12A , dl
F
/dt = 100 A /
S
26
13
-15
-1.3.
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
REV1.0
2
F-32-5
NIKO-SEM
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
PK537BA
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
30
Transfer Characteristics
30
-I
D
, Drain-To-Source Current(A)
24
-I
D
, Drain-To-Source Current(A)
VGS=-10V
VGS=‐9V
VGS=‐8V
VGS=‐7V
VGS=‐6V
VGS=‐5V
VGS=‐4.5V
VGS=-2.7V
VGS=-3V
24
18
18
12
VGS=-2.5V
6
12
25℃
6
125℃
-20℃
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
-V
DS
, Drain-To-Source Voltage(V)
-V
GS
, Gate-To-Source Voltage(V)
Gate charge Characteristics
10
3000
Capacitance Characteristic
-V
GS
, Gate-To-Source Voltage(V)
C , Capacitance(pF)
8
VDS=-15V
ID=-12A
2500
CISS
2000
6
1500
4
1000
COSS
500
CRSS
2
0
0
10
20
30
40
50
60
0
0
5
10
15
20
25
Qg , Total Gate Charge(n
-V
DS
, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
0.1
0.01
On-Resistance VS Drain Current
R
DS(ON)
ON-Resistance(OHM)
R
DS(ON)
ON-Resistance(OHM)
0.08
0.008
VGS=-4.5V
0.06
0.006
VGS=-10V
0.004
0.04
0.02
ID=-12A
0
2
4
6
8
10
0.002
0
0
6
12
18
24
30
-V
GS
, Gate-To-Source Voltage(V)
-I
D
, Drain-To-Source Current(A)
REV1.0
3
F-32-5
NIKO-SEM
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
PK537BA
PDFN 5x6P
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS=-10V
ID=-12A
Source-Drain Diode Forward Voltage
100
Normalized Drain to Source
ON-Resistance
-I
S
, Source Current(A)
10
125℃
1
25℃
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature(˚C)
-V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
1000
Operation in This
Area is Limited by
RDS(ON)
Single Pulse Maximum Power Dissipation
80
Single Pulse
RθJA = 54˚C/W
TA = 25˚C
-I
D
, Drain Current(A)
100
64
Power(W)
10
1ms
1
10ms
100ms
0.1
NOTE :
1.VGS= -10V
2.TA=25˚C
3.RθJA = 54˚C/W
4.Single Pulse
0.1
1
10
48
32
DC
16
0.01
100
0
0.001
0.01
0.1
1
10
100
-V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
1.Duty cycle, D= t1 / t2
2.RthJA = 54
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
Notes
10
100
T
1
, Square Wave Pulse Duration[sec]
REV1.0
4
F-32-5
NIKO-SEM
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
PK537BA
PDFN 5x6P
Halogen-Free & Lead-Free
REV1.0
5
F-32-5
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