MH187 Specifications
General-Purpose Hall Effect Latch
MH187 Hall-effect sensor is a temperature stable, stress-resistant latch. Superior
high-temperature performance is made possible through a dynamic offset cancellation that
utilizes chopper-stabilization. This method reduces the offset voltage normally caused by
device over molding, temperature dependencies, and thermal stress.
MH187 includes the following on a single silicon chip: voltage regulator, Hall voltage
generator, small-signal amplifier, chopper stabilization, Schmitt trigger, ESD circuit protection,
open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of
low-voltage requirements, component matching, very low input-offset errors, and small
component geometries.
This device requires the presence of both south and north polarity magnetic fields for
operation. In the presence of a south polarity field of sufficient strength, the device output
latches on, and only switches off when a north polarity field of sufficient strength is present.
MH187 is rated for operation between the ambient temperatures –40
℃
and 85
℃
for the E
temperature range, and –40
℃
to 125
℃
for the K temperature range. The three package styles
available provide magnetically optimized solutions for most applications. Package types SO is
an SOT-23(1.1 mm nominal height),SQ is an QFN2020-3(0.5 mm nominal height), a miniature
low-profile surface-mount package, while package UA is a three-lead ultra-mini SIP for
through-hole mounting.
The UA package SO type and SQ type are
Halogen Free
package. All of them have been
verified by third party Lab.
Features and Benefits
Chopper stabilized amplifier stage
Optimized for BLDC motor applications
Reliable and low shifting on high Temp condition
Good ESD Protection
100% tested at 125
℃
for K.
100% tested at 150
℃
for L.
Custom sensitivity / Temperature selection are available.
Applications
High temperature Fan motor
3 phase BLDC motor application
Speed sensing
Position sensing
Current sensing
Revolution counting
Solid-State Switch
Linear Position Detection
Angular Position Detection
Proximity Detection
High ESD Capability
091212
Page 1 of 5
Rev. 1.03
MH187 Specifications
General-Purpose Hall Effect Latch
Ordering Information
XXXXXXXXX - X
Sorting Code
Package type
Temperature Code
Part number
Company Name and Product Category
Company Name and Product Category
MH:MST Hall Effect/MP:MST Power MOSFET
Part number
181,182,183,184,185,248,249,276,477,381,381F,381R,382…..
If part # is just 3 digits, the forth digit will be omitted.
Temperature range
E: 85
℃,
I: 105
℃,
K: 125
℃,
L: 150
℃
Package type
UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23,
SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin)
Sorting
α,β,Blank…..
Part No.
MH187LUA
MH187KUA
MH187KSO
MH187KSQ
MH187EUA
MH187ESO
MH187ESQ
Temperature Suffix
L (-40℃
to
+ 150℃)
K (-40℃
to
+ 125℃)
K (-40℃
to
+ 125℃)
K (-40℃
to
+ 125℃)
E (-40℃
to
+ 85℃)
E (-40℃
to
+ 85℃)
E (-40℃
to
+ 85℃)
Package Type
UA (TO-92S)
UA (TO-92S)
SO (SOT-23)
SQ (QFN2020-3)
UA (TO-92S)
SO (SOT-23)
SQ (QFN2020-3)
KUA spec is using in industrial and automotive application. Special Hot Testing is utilized.
Functional Diagram
V
DD
Out
Voltage
Regulator
Amp
Hall
Sensor
GND
.
091212
Page 2 of 5
Rev. 1.03
MH187 Specifications
General-Purpose Hall Effect Latch
Absolute Maximum Ratings
At (Ta=25
℃
)
Characteristics
Supply voltage, (V
DD
)
Output Voltage,(V
out
)
Reverse voltage, (V
DD
) (V
OUT
)
Magnetic flux density
Output current, (I
OUT
)
“E” version
Operating Temperature Range, (Ta)
Values
28
28
-0.3
Unlimited
50
-40 to +85
-40 to +125
-40 to +150
-65 to +175
175
“K” version
“L” version
Unit
V
V
V
Gauss
mA
℃
℃
℃
°C
°C
℃/W
℃/W
mW
Storage temperature range, (Ts)
Maximum Junction Temp,(Tj)
Thermal Resistance
(θ
ja
)
UA / SO / SQ
(
θ
jc
) UA / SO / SQ
206 / 543 / 543
148 / 410 / 410
728 / 543 / 543
Package Power Dissipation, (P
D
)
UA / SO / SQ
Note:
Do not apply reverse voltage to
V
DD
and
V
OUT
Pin, It may be caused for Miss function or damaged device.
Electrical Specifications
DC Operating Parameters
：
T
A
=+25
℃
, V
DD
=12V
Parameters
Supply Voltage,(V
DD
)
Supply Current,(I
DD
)
Output Saturation Voltage, (V
sat
)
Output Leakage Current, (I
off
)
Output Rise Time, (T
R
)
Output Fall Time, (T
F
)
Electro-Static Discharge
Operate Point,(B
OP
)
Release Point,(B
RP
)
Hysteresis,(B
HYS
)
Test Conditions
Operating
B<B
OP
I
OUT
= 10 mA, B>B
OP
I
OFF
B<B
RP
, V
OUT
= 12V
R
L
=820Ω, CL =20pF
R
L
=820Ω; CL =20pF
Min
3.5
Typ
Max
26.0
5.0
400.0
15.0
0.45
0.45
Units
V
mA
mV
uA
uS
uS
KV
HBM
4
15
-60
80
60
-15
Gauss
Gauss
Gauss
091212
Page 3 of 5
Rev. 1.03
MH187 Specifications
General-Purpose Hall Effect Latch
Typical application circuit
Vcc
D1
R2
VDD
MH187
Out
Output
D1：1N4148 or 100Ω
C1：1000PF
C2：15PF
R2：10KΩ
C1
GND
C2
Sensor Location, package dimension and marking
MH187 Package
UA Package
Hall Chip location
2.00
1.50
187
XXX
NOTES:
1).Controlling dimension: mm
2).Leads must be free of flash
and plating voids
3).Do not bend leads within 1
mm of lead to package
interface.
4).PINOUT:
Pin 1
Pin 2
Pin 3
V
DD
GND
Output
Hall Sensor
Location
Mark
Output Pin Assignment
(Top view)
187
XXX
1
2
3
V
DD
GND
Out
091212
Page 4 of 5
Rev. 1.03
MH187 Specifications
General-Purpose Hall Effect Latch
SO Package
(Top View)
Hall Plate Chip Location
(Bottom view)
3
3
187XX
1
2
Hall Sensor
Location
0.80
2
1
1.45
NOTES:
1. PINOUT (See Top View at left :)
Pin 1
Pin 2
Pin 3
V
DD
Output
GND
2. Controlling dimension: mm
3. Lead thickness after solder plating
will be 0.254mm maximum
SQ Package
Hall Plate Chip Location
187
XX
(Top view)
NOTES:
1.
PINOUT (See Top View
at left)
Pin 1
Pin 2
Pin 3
V
DD
Output
GND
Hall Sensor
Location
1
3
1
1
2
1
2
2.
Controlling dimension:
mm;
3.
Chip rubbing will be
10mil
maximum;
3
4.
Chip must be in PKG.
center.
091212
Page 5 of 5
Rev. 1.03
NXP MCU
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