LY62L12816
Rev. 1.8
128K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issue
Revised Package Outline Dimension(TSOP-II)
Added I
SB1
/I
DR
values when T
A
= 25
℃
and T
A
= 40
℃
Added SL grade
Deleted L grade
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and
green package available
to
Green package available
Added packing type in
ORDERING INFORMATION
Revised V
TERM
to V
T1
and V
T2
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised
PACKAGE OUTLINE DIMENSION
in page 10
Revised
ORDERING INFORMATION
in page 11
Rephrased
WRITE CYCLE
Notes 1,2
of
TIMING WAVEFORMS
in page 8
Correct
ORDERING INFORMATION
Typo.
Revised
PIN DESCRIPTION
in page 1
Revised
TEST CONDITION
/TYP. /MAX. of I
CC
Revised t
OE
in
AC ELECTRICAL CHARACTERISTICS
Issue Date
Jul.25.2004
Apr.12.2007
Mar.30.2009
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 1.6
Rev. 1.7
Rev. 1.8
May.6.2010
Aug.30.2010
May.5.2016
May.20.2016
Mar.06.2017
May.04.2017
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
LY62L12816
Rev. 1.8
128K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L12816 is a 2,097,152-bit low power
CMOS static random access memory organized
as 131,072 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
The LY62L12816 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L12816 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs
are fully TTL compatible.
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 17/14/11mA (TYP.)
Standby current : 1µ A (TYP.) LL/SL -version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400mil TSOP II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L12816
LY62L12816(E)
LY62L12816(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
V
CC
Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(I
CC
,TYP.)
1µA
17/14/11mA
1µA
17/14/11mA
1µA
17/14/11mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 - A16
DQ0 - DQ15
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
No Connection
A0-A16
DECODER
128Kx16
MEMORY ARRAY
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
V
SS
NC
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LY62L12816
Rev. 1.8
128K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
LY62L12816
XXXXXXXX
XXXXXXXX
TSOP II
9
10
11
12
13
14
15
16
17
18
19
20
21
22
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
NC
CE# DQ0
LY62L12816
XXXXXXXX
XXXXXXXX
DQ9 DQ10 A5
Vss DQ11 NC
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
DQ1 DQ2
DQ3 Vcc
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
5
6
TFBGA (See through with Top View)
TFBGA (Top View)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
LY62L12816
Rev. 1.8
128K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0 - DQ7 DQ8 - DQ15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
High-Z
D
OUT
D
OUT
D
OUT
D
IN
High-Z
High-Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Note:
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LY62L12816
Rev. 1.8
128K X 16 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
Input High Voltage
V
IH*1
Input Low Voltage
V
IL*2
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = MIN.
- 45
CE# = 0.2V and CE2≧ V
CC
-0.2V,
- 55
I
CC
I
I/O
= 0mA
Average Operating
- 70
Other pins at 0.2V or V
CC
- 0.2V
Power supply Current
Cycle time = 1µ s
I
CC1
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
I
SB
CE# = V
IH,
other pins at V
IL
or V
IH
LL
LLE/LLI
Standby Power
Supply Current
I
SB1
SL
*5
25℃
CE#
≧
V
CC
- 0.2V
SLE
*5
Others at 0.2V or V
CC
- 0.2V
SLI
*5
40℃
SL
SLE/SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.)
and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
*4
MAX. UNIT
3.0
3.6
V
-
V
CC
+0.3 V
-
0.6
V
-
1
µA
-
2.7
-
17
14
11
4
0.3
1
1
1
1
1
1
1
-
0.4
32
25
20
5
0.5
10
20
3
3
10
15
µA
V
V
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX.
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
