GUO40-16NO1
Standard Rectifier
3~
Rectifier
V
RRM
= 1600 V
I
DAV
=
I
FSM
=
40 A
370 A
3~ Rectifier Bridge
Part number
GUO40-16NO1
Backside: isolated
+
D1
D3
D5
~
~
~
D2
D4
D6
-
Features / Advantages:
●
Low forward voltage drop
●
Planar passivated chips
●
Easy to mount with one screw
●
Space and weight savings
Applications:
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
GUFP
●
Isolation Voltage: 2500 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Base plate: Plastic overmolded tab
●
Reduced weight
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191219d
© 2019 IXYS all rights reserved
GUO40-16NO1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d=
⅓
T
VJ
= 175 °C
0.74
16.3
0.5
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
10
35
370
400
315
340
685
665
495
480
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1700
V
1600
40
1.5
1.06
1.28
0.92
1.23
40
V
µA
mA
V
V
V
V
A
V
R
= 1600 V
V
R
= 1600 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
30 A
10 A
30 A
forward voltage drop
I
DAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
bridge output current
T
C
= 90 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
4.3 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191219d
© 2019 IXYS all rights reserved
GUO40-16NO1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
GUFP
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
K/W
8.5
0.8
20
6.7
10.0
5.4
8.0
2500
50/60 Hz, RMS; I
ISOL
≤
1 mA
1.2
120
t = 1 second
t = 1 minute
2100
50
R
thJA
thermal resistance junction to ambient
Ordering
Standard
Ordering Number
GUO40-16NO1
Marking on Product
GUO40-16NO1
Delivery Mode
Tube
Quantity
14
Code No.
514899
Similar Part
DNA40U2200GU
DMA40U1800GU
GUO40-12NO1
GUO40-08NO1
Package
GUFP
GUFP
GUFP
GUFP
Voltage class
2200
1800
1200
800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 175°C
Rectifier
V
0 max
R
0 max
0.74
13.7
V
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191219d
© 2019 IXYS all rights reserved
GUO40-16NO1
Outlines GUFP
Dim.
Millimeter
min
typ.
max
5.40 5.50 5.60
3.90 4.00 4.10
0.95 1.00 1.10
0.95 1.00 1.05
1.60 1.70 1.80
1.25 1.30 1.35
0.95 1.00 1.05
1.95 2.00 2.05
0.45 0.50 0.55
24.80 25.00 25.20
34.70 35.00 35.30
BSC 7.50
2.40 2.50 2.60
20.30 20.40 20.50
3.70 3.75 3.80
17.40 17.50 17.60
4.10 4.20 4.30
9.20 9.30 9.40
1.77
3.45 3.50 3.55
1.45 1.50 1.55
0.95 1.00 1.05
0.95 1.00 1.05
3.20 3.30 3.40
1.90
1.60
4.65
2.80
2.00
1.65
4.70
2.90
2.10
1.70
4.75
3.00
min
0.213
0.154
0.037
0.037
0.063
0.049
0.037
0.077
0.018
0.977
1.367
BSC
0.095
0.800
0.146
0.686
0.162
0.362
0.136
0.057
0.037
0.037
0.126
0.075
0.063
0.183
0.110
Inches
typ.
0.217
0.158
0.039
0.039
0.067
0.051
0.039
0.079
0.020
0.985
1.379
0.296
0.099
0.804
0.148
0.690
0.165
0.366
0.070
0.138
0.059
0.039
0.039
0.130
0.079
0.065
0.185
0.114
max
0.221
0.162
0.043
0.041
0.071
0.053
0.041
0.081
0.022
0.993
1.391
0.102
0.808
0.150
0.693
0.169
0.370
0.140
0.061
0.041
0.041
0.134
0.083
0.067
0.187
0.118
O
Z1
A2
ØP
S1
+1
+2
_
L1
~
~
~
+
S2
5x b2
5x b
C
e
4x e
F
E
A6
A
A5
A3
A4
A
A2
A3
A4
A5
A6
b
b2
C
D
E
e
F
L
L1
O
ØP
Q
Ø
Q
D
Z2
Y2
L
Y1
X1
R
X2
/
2
R
s1
s2
t1
t2
x1
x2
y1
y2
z1
+
D1
D3
D5
~
~
~
D2
D4
D6
-
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191219d
© 2019 IXYS all rights reserved
GUO40-16NO1
Rectifier
60
300
50 Hz
0.8 x V
RRM
800
V
R
= 0 V
600
40
250
I
F
[A]
20
T
VJ
=
125°C
150°C
I
FSM
[A]
200
T
VJ
= 45°C
I
2
t
400
T
VJ
= 45°C
[A s]
T
VJ
= 150°C
T
VJ
= 150°C
2
200
T
VJ
= 25°C
0
0.4
0.8
1.2
1.6
150
10
-3
10
-2
10
-1
10
0
0
1
10
V
F
[V]
Fig. 1 Forward current vs.
voltage drop per diode
t [s]
Fig. 2 Surge overload current
vs. time per diode
2
t [ms]
Fig. 3 I t vs. time per diode
20
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
0.6 KW
0.8 KW
1
2
4
8
KW
KW
KW
KW
40
DC =
1
16
30
0.5
0.4
0.33
P
tot
[W]
12
I
F(AV)M
20
0.17
0.08
8
[A]
10
4
0
0
4
8
12
16
0
25
50
75
100
125
150
175
0
0
25
50
75 100 125 150 175
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
T
A
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
5
4
Z
thJC
3
[K/W]
2
Constants for Z
thJC
calculation:
i
1
R
th
(K/W)
0.302
1.252
1.582
1.164
t
i
(s)
0.002
0.032
0.227
0.820
1
2
3
4
1
10
100
1000
10000
0
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191219d
© 2019 IXYS all rights reserved
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
