SGP0230SD thru SGP0240SD
Surface Mount Schottky Rectifier
Reverse Voltage 30~40V Forward Current 2A
Features
•
•
•
•
•
Low VF Schottky barrier diodes
Very low profile - typical height of 1.0 mm
Low forward voltage drop
Moisture sensitivity: level 1, per J-STD-020
High temperature soldering guaranteed:
260℃/10
seconds
eSGP(SOD‐323F)
Typical Applications
For use of fast swiching in RF module, lighting, cellular phone, portable device,
power supplies and other consumer applications.
Maximum Ratings
Parameter
(TA = 25 °C unless otherwise noted)
Symbol
VRRM
VRMS
VDC
IF(AV)
IFSM
TJ,
TSTG
SGP0230SD
30
21
30
2.0
40
- 55 to + 150
SGP0240SD
40
28
40
Unit
V
V
V
A
A
°C
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
g
g
sine-wave superimposed on rated load
Operating junction and storage temperature range
Electrical Characteristics
Parameter
Maximum instantaneous
forward voltage
Test Conditions
IF=2A,TA=25℃
(TA = 25 °C unless otherwise noted)
Symbol
V
F
I
R
C
J
R
θJM
SGP0230SD
0.55
0.1
120
60
SGP0240SD
Unit
Volts
mA
p
pF
℃/W
Maximum DC reverse current at
TA=25℃
rated DC blocking voltage
Typical junction capacitance
yp
j
p
Typical thermal resistance
4.0 V, 1 MHz
,
juntion to mount
Note:1),The thermal resistance from junction to mount,mounted on P.C.B with 5×5mm copper pads,2 OZ,FR4 PCB
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1/4
2015.02-Rev.A
SGP0230SD thru SGP0240SD
Surface Mount Schottky Rectifier
Reverse Voltage 30~40V Forward Current 2A
Ratings and Characteristics Curves
(TA = 25℃ unless otherwise noted)
Figure 1.Forward Current Derating Curve
Figure 2. Typical Instantaneous Forward
Characteristics
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Junction Capacitance
Figure 5.Maximum Non‐Repetitive Peak
Forward Surge Current
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2/4
2015.02-Rev.A
SGP0230SD thru SGP0240SD
Surface Mount Schottky Rectifier
Reverse Voltage 30~40V Forward Current 2A
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Electronics Co., Ltd.or a third party.
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and algorithms represents information on products at the time of publication of these materials,
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