DATASHEET
5mm Phototransistor
PT534-6B
Technical Data Sheet
5mm Silicon Phototransistor T-1 3/4
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․The
product itself will remain within RoHS compliant version.
․
Copliance with EU REACH
․
Compliance Halogen Free.（Br＜900 ppm，Cl＜900ppm，Br+Cl＜1500ppm）
Descriptions
․PT534-6B
is a high speed and high sensitive NPN silicon
phototransistor molded in a standard
5
mm package.
Due to its black epoxy the device is sensitive to visible and
near infrared radiation..
Applications
․Infrared
applied system
․Camera
․Printer
․Cockroach
catcher
Device Selection Guide
LED Part No.
PT534-6B
Chip
Material
Silicon
Lens Color
Black
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.03.2016. Issue No: DPT-0000049_Rev.4
www.everlight.com
DATASHEET
5mm Phototransistor
PT534-6B
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.03.2016. Issue No: DPT-0000049_Rev.4
www.everlight.com
DATASHEET
5mm Phototransistor
PT534-6B
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation at (or
below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-40 ~ +85
-40 ~ +100
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦10 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Symbol
BV
CEO
BV
ECO
V
CE (sat)
t
r
t
f
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
---
---
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
Min
30
5
---
Typ
---
---
---
Max Unit
---
---
V
V
V
0.4
---
---
---
15
15
---
---
μS
---
100
nA
Collector Dark Current
I
CEO
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
I
C(on)
0.7
1.2
---
mA
λp
λ
0.5
---
800
940
---
---
1100
nm
nm
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.03.2016. Issue No: DPT-0000049_Rev.4
www.everlight.com
DATASHEET
5mm Phototransistor
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
700
800
900
1000 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
100
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.03.2016. Issue No: DPT-0000049_Rev.4
www.everlight.com
DATASHEET
5mm Phototransistor
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.03.2016. Issue No: DPT-0000049_Rev.4
www.everlight.com
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