Technical Data Sheet
5mm Phototransistor T-1
PT333-3C
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․This
product itself will remain within RoHS compliant version.
Descriptions
․PT333-3C
is a high speed and high sensitive NPN silicon
NPN epitaxial planar phototransistor molded in a standard 5 mm package.
Due to is water clear epoxy the device is sensitive to visible and near
Infrared radiation.
Applications
․Infrared
applied system
․Camera
․Cockroach
catcher
Device Selection Guide
LED Part No.
PT333-3C
Chip
Material
Silicon
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：CDPT-033-008
http:\\www.everlight.com
Prepared date：2005/7/24
Rev 1
Page: 1 of 7
Prepared by：Yinhua He
PT333-3C
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature(*1)
Power Dissipation at (or below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-25 ~ +85℃
-40 ~ +85℃
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：CDPT-033-008
http:\\www.everlight.com
Prepared date：2005/7/24
Rev 1
Page: 2 of 7
Prepared by：Yinhua He
PT333-3C
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
Symbol
BV
CEO
BV
ECO
V
CE)(sat)
t
r
t
f
I
CEO
I
C(on)
λp
λ
0.5
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
---
---
Min.
30
5
---
---
---
---
0.7
---
---
Typ.
---
---
---
15
15
---
4.0
940
400-1100
Max.
---
---
0.4
---
---
100
---
---
---
nA
mA
nm
nm
Units
V
V
V
μS
Rankings
Parameter
G
H
J
K
L
Ic
(ON)
Symbol
Min
0.70
1.14
1.77
2.67
4.18
Max
1.90
2.60
3.61
5.07
7.07
mA
Unit
Test Condition
Vc
E
=5V
Ee=1mW/cm²
Everlight Electronics Co., Ltd.
Device No：CDPT-033-008
http:\\www.everlight.com
Prepared date：2005/7/24
Rev 1
Page: 3 of 7
Prepared by：Yinhua He
PT333-3C
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
T
a
=25˚C
100
80
60
40
20
0
-25
0
25
50
75 85 100
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Everlight Electronics Co., Ltd.
Device No：CDPT-033-008
http:\\www.everlight.com
Prepared date：2005/7/24
Rev 1
Page: 4 of 7
Prepared by：Yinhua He
PT333-3C
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：CDPT-033-008
http:\\www.everlight.com
Prepared date：2005/7/24
Rev 1
Page: 5 of 7
Prepared by：Yinhua He
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