Sidelooker Phototransistor
PT928-6C-F
Features
․Fast
response time
․High
sensitivity
․Small
junction capacitance
․Pb
Free
․This
product itself will remain within RoHS compliant version
․Compliance
with EU REACH
․Compliance
Halogen Free (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm)
Descriptions
․PT928-6C-F
is a phototransistor in miniature package which
is molded.in.a. plastic with spherical top view lens
․The
device is spectrally matched to infrared emitting diode
Applications
․Optoelectronic
switch
․VCR,
Video Camera
․Floppy
disk drive
․Infrared
applied system
Device Selection Guide
Part Category
PT
Chip Material
Silicon
Lens Color
Water Clear
1
Copyright © 2010, Everlight All Rights Reserved. Release Date: 2016/11/23.Issue No: DPT-0000529 Rev.4
www.everlight.com
Data Sheet
Sidelooker phototransistor
PT928-6C-F
Package Dimension
Collector
Emitter
Notes: 1. All dimensions are in millimeters
Notes:
2. Tolerances unless dimensions ±0.3mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
Rating
30
5
20
-25 ~ +85
-40 ~ +85
260
75
Units
V
V
mA
˚C
˚C
˚C
mW
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature *1
Power Dissipation at (or below)
P
d
25 ˚C Free Air Temperature
Notes:
*1. Soldering time≦5 seconds.
2
Copyright © 2010, Everlight All Rights Reserved. Release Date: 2016/11/23. Issue No: DPT-0000529 Rev.4
www.everlight.com
Data Sheet
Sidelooker phototransistor
PT928-6C-F
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang of Spectral Bandwidth
Wavelength of Peak Sensitivity
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Dark Current
Collector-Emitter Saturation Voltage
On State Collector Current
Symbol
λ
0.5
λp
BV
CEO
BV
ECO
I
CEO
V
CE(sat)
I
C(on)
Condition
----
----
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
V
CE
=20V
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V
Ee=0.555mW/cm
2
Min.
450
--
30
5
--
--
0.53
Typ.
--
940
--
--
--
--
--
Max. Units
1100
--
--
--
100
0.4
3.41
nm
nm
V
V
nA
V
mA
Rank
Condition: V
CE
=5V, Ee=0.555mW/cm
2
Symbol
Condition
Ranks
7-3
I
C(ON)
V
CE
=5V
Ee=0.555mW/cm
2
7-2
7-1
6-2
6-1
Min.
0.53
0.88
1.24
1.59
1.77
Max.
1.19
1.70
2.21
2.98
3.41
Unit
mA
Notes:
This bin table is only for reference, not for specific bin shipment.
Test Method For I
C(ON)
:
Condition: V
CE
= 5V Ee=0.555mW/cm
2
3
Copyright © 2010, Everlight All Rights Reserved. Release Date: 2016/11/23. Issue No: DPT-0000529 Rev.4
www.everlight.com
Data Sheet
Sidelooker phototransistor
PT928-6C-F
Typical Electro-Optical Characteristics Curves
Fig.1 Spectral Sensitivity
Fig.2 Collector Current vs.
Irradiance
Fig.3 Collector Current vs.
Collector-Emitter Voltage
4
Copyright © 2010, Everlight All Rights Reserved. Release Date: 2016/11/23. Issue No: DPT-0000529 Rev.4
www.everlight.com
Data Sheet
Sidelooker phototransistor
PT928-6C-F
Packing Quantity Specification
1000 pcs/bag, 10 bags/box
10 boxes/carton
Label Form Specification
‧CPN:
Customer Part Number
‧P/N:
Part Number
‧QTY:
Packing Quantity
‧CAT:
Ranks
‧REF:
Reference
‧LOT
No: Lot Number
Notes
Lead Forming
1. During lead frame bending, the lead frame should be bent at a distance more than 3mm
from bottom of the epoxy.
Note: Must fix lead frame and do not touch epoxy before bending to avoid Phototransistors
broken.
2. Lead forming should be done before soldering.
3. Avoid stressing the Phototransistor package during leads forming. The stress to the base
may damage the Phototransistor’s characteristics or it may break the Phototransistors.
4. Cut the Phototransistor lead frame at room temperature. Cutting the lead frame at high
temperatures may cause failure of the Phototransistors.
5. When mounting the Phototransistors onto a PCB, the PCB holes must be aligned exactly
with the lead position of the Phototransistor. If the Phototransistors are mounted with stress
at the leads, it causes deterioration of the epoxy resin and this will degrade the
Phototransistors.
Storage
1. The Phototransistors should be stored at 10~30°C and 70%RH or less after being shipped
from Everlight and the storage life limits are 3 months. If the Phototransistors are stored for
3 months or more, they can be stored at 10°C~25°C and 20%RH~60%RH for a year in a
sealed container with a nitrogen atmosphere. After opening the package, the devices must
be stored at 10°C~25°C and 20%RH~60%RH, and suggested to be used within 24 hours
or as soon as possible. Besides, suggest that the remaining devices seal in the package
bag as soon as possible please.
2. Please avoid rapid transitions in ambient temperature, especially in
high humidity environments where condensation can occur.
5
Copyright © 2010, Everlight All Rights Reserved. Release Date: 2016/11/23. Issue No: DPT-0000529 Rev.4
www.everlight.com
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