CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date : 2019.01.03
Page No. : 1/11
MTB1D0N03RH8
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C(silicon limit)
I
D
@V
GS
=10V, T
C
=25°C(package limit)
30V
200A
84A
34.5A
0.7mΩ
1.1mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(TYP)
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Symbol
MTB1D0N03RH8
Outline
DFN5×6
Pin 1
D
D
S
S
S
D
D
G
S
S
G
S
Pin 1
D
D
D
D
G：Gate D：Drain S：Source
Ordering Information
Device
MTB1D0N03RH8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D0N03RH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date : 2019.01.03
Page No. : 2/11
10s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25C, V
GS
=10V
(silicon limit)
(Note 1)
Continuous Drain Current @ T
C
=100C, V
GS
=10V
(silicon limit)
(Note 1)
Continuous Drain Current @ T
C
=25C, V
GS
=10V
(package)
(Note 1)
Continuous Drain Current @ T
A
=25C, V
GS
=10V
Continuous Drain Current @ T
A
=70C, V
GS
=10V
Continuous Drain Current @ T
A
=85C, V
GS
=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, I
D
=50A, V
DD
=15V
Repetitive Avalanche Energy @ L=0.05mH
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25C
T
A
=70C
T
A
=85C
Operating Junction and Storage Temperature Range
V
DS
V
GS
30
±20
200
V
I
D
126.5
84
A
34.5
27.6
24.9
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
52
41.6
37.5
588
*1
108
1250
8
*2
83
33
5.7
2.5
4.0
1.8
3.6
1.6
-55~+150
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Symbol
t≤10s
Steady State
R
θJA
Thermal Resistance, Junction-to-case
R
θJC
Typical
18
42
1.3
Maximum
22
50
1.5
Unit
C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in
²
FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25°C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.100% tested by conditions of L=0.1mH, I
AS
=30A, V
GS
=10V, V
DD
=15V
MTB1D0N03RH8
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
R
DS(ON)
Dynamic
Ciss
Coss
Crss
Qg(V
GS
=10V)
*1, 2
Qg(V
GS
=4.5V)
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6257
4552
214
108
54.6
19.6
20.9
30.4
20.6
84.8
14.2
0.8
-
-
0.77
69.7
82.1
8134
5918
278
162
82
-
-
45.6
42
127
30
-
60
588
1.2
91
107
pF
*1
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date : 2019.01.03
Page No. : 3/11
Min.
30
1
-
-
-
-
-
-
Typ.
-
-
42.5
-
-
-
0.7
1.1
Max.
-
2.5
-
±
100
1
25
1
1.5
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
20V, V
DS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=125C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
*1
V
GS
=0V, V
DS
=20V, f=1MHz
nC
V
DS
=20V, V
GS
=10V, I
D
=20A
ns
Ω
V
DD
=15V, I
D
=20A, V
GS
=10V,
R
G
=1Ω
f=1MHz
A
V
ns
nC
I
S
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
300μs,
Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB1D0N03RH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date : 2019.01.03
Page No. : 4/11
Brekdown Voltage vs Ambient Temperature
1.4
180
160
10V, 9V, 8V,7V,6V,5V
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
I
D
, Drain Current (A)
140
120
100
80
60
40
20
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
V
GS
=2.5V
4V
3.5V
V
GS
=3V
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
10
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
V
GS
=4.5V
6V
7V
10V
V
GS
=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
1
0.4
0.2
0.1
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8 10 12 14 16
I
DR
, Reverse Drain Current(A)
18
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
5
2.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=20A
4
3
2
1
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=20A
R
DS(ON)
@Tj=25°C : 0.7mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB1D0N03RH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date : 2019.01.03
Page No. : 5/11
Threshold Voltage vs Junction Tempearture
1.4
V
GS(th)
, Normalized Threshold Voltage
10000
1.2
I
D
=1mA
Capacitance---(pF)
C
oss
1
0.8
0.6
0.4
0.2
I
D
=250μA
1000
Crss
100
0
5
10
15
20
V
DS
, Drain-Source Voltage(V)
25
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
V
DS
=10V
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
10
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
8
V
DS
=15V
6
V
DS
=20V
4
1
0.1
Ta=25°C
Pulsed
2
I
D
=22A
0
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
20
40
60
80
100
120
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
250
Silicon Limit
I
D
, Maximum Drain Current(A)
R
DSON
Limited
200
150
100
50
0
Package Limit
I
D
, Drain Current(A)
100
100μs
1ms
10
10ms
100m
DC
1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θJC
=1.5°C/W
Single Pulse
V
GS
=10V, Tj(max)=150°C,
R
θJC
=1.5°C/W
0.1
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB1D0N03RH8
CYStek Product Specification
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