CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date : 2018.05.03
Page No. : 1/13
MTC3586BDFA6
N-CH
P-CH
BV
DSS
20V
-20V
I
D
5A(V
GS
=4.5V)
-3.3A(V
GS
=-4.5 V)
27mΩ(V
GS
=4.5V) 78mΩ(V
GS
=-4.5V)
R
DSON
(
TYP
.) 37mΩ(V
GS
=2.5V) 115mΩ(V
GS
=-2.5V)
Description
82mΩ(V
GS
=1.5V) 280mΩ(V
GS
=-1.5V)
The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
Features
•
Simple drive requirement
•
Low gate charge
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586BDFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
MTC3586BDFA6-0-T1-G
Package
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3586BDFA6
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
(Note 1)
Continuous Drain Current @T
A
=70
°C
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
(Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date : 2018.05.03
Page No. : 2/13
Limits
N-channel P-channel
20
-20
±12
±12
5
-3.3
4
-2.6
20
-20
1.38
0.01
-55~+150
Unit
V
A
W
W /
°C
°C
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec
2.
Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
20
-
0.5
-
-
-
-
-
-
-
Typ.
-
0.02
0.7
-
-
-
27
37
82
7
423
50
48
6
8
11
10
6
0.8
2.5
0.77
16
8
Max.
-
-
1.2
±100
1
10
40
50
105
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V/°C
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±12V, V
DS
=0
V
DS
=20V, V
GS
=0
V
DS
=16V, V
GS
=0, Tj=70°C
I
D
=3.5A, V
GS
=4.5V
I
D
=1.2A, V
GS
=2.5V
I
D
=0.5A, V
GS
=1.5V
V
DS
=5V, I
D
=3A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
pF
V
DS
=20V, V
GS
=0, f=1MHz
V
DS
=15V, I
D
=1A,
V
GS
=5V, R
G
=3.3
Ω
, R
D
=15
Ω
ns
nC
V
DS
=16V, I
D
=3A, V
GS
=4.5V
V
ns
nC
V
GS
=0V, I
S
=1.2A
I
S
=3A, V
GS
=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTC3586BDFA6
CYStek Product Specification
CYStech Electronics Corp.
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
-20
-
-
-
-
-
-
-
-
-
Typ.
-
-0.01
-0.8
-
-
-
78
115
280
5
429
45
41
6
17
16
5
6
0.8
2.4
-0.82
20
15
Max.
-
-
-1.2
±100
-1
-25
105
150
350
-
-
-
-
-
-
-
-
-
-
-
-1.2
-
-
Unit
V
V/°C
V
nA
μA
mΩ
S
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date : 2018.05.03
Page No. : 3/13
P-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Test Conditions
V
GS
=0, I
D
=-250μA
Reference to 25°C, I
D
=-1mA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±12V, V
DS
=0
V
DS
=-20V, V
GS
=0
V
DS
=-16V, V
GS
=0, Tj=70°C
I
D
=-2.5A, V
GS
=-4.5V
I
D
=-2A, V
GS
=-2.5V
I
D
=-0.5A, V
GS
=-1.5V
V
DS
=-5V, I
D
=-2A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
pF
V
DS
=-20V, V
GS
=0, f=1MHz
V
DS
=-10V, I
D
=-1A,
V
GS
=-10V, R
G
=3.3
Ω
, R
D
=10
Ω
ns
nC
V
DS
=-16V, I
D
=-2A, V
GS
=-4.5V
V
ns
nC
V
GS
=0V, I
S
=-1.2A
I
S
=-2A, V
GS
=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
80
90
(Note )
Unit
°C/W
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 195
°C/W
when mounted on minimum copper pad
MTC3586BDFA6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Typical Characteristics
Typical Output Characteristics
20
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date : 2018.05.03
Page No. : 4/13
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
4.5V, 3.5V, 3V, 2.5V
I
D
, Drain Current(A)
16
V
GS
=2V
12
1.2
1
8
0.8
I
D
=250
μ
A,
V
GS
=0V
4
V
GS
=1.5V
0.6
0
0
1
2
3
4
5
0.4
-75
-50
-25
0
25
50
75
100 125 150 175
V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=1.5V
V
GS
=2.5V
0.8
0.6
0.4
0.2
Tj=150°C
100
V
GS
=2.5V
V
GS
=4.5V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
1
2
3
4
I
DR
, Reverse Drain Current(A)
5
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
1.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
I
D
=3.5A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
1
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=4.5V, I
D
=3.5A
R
DS(ON)
@Tj=25°C :27mΩ
2
3
4
V
GS
, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
MTC3586BDFA6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, NormalizedThreshold Voltage
1000
Spec. No. : C835DFA6
Issued Date : 2015.11.02
Revised Date : 2018.05.03
Page No. : 5/13
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
Ciss
100
C
oss
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-60 -40 -20
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
V
GS
, Gate-Source Voltage(V)
40
Power (W)
30
20
10
0
0.001
T
J(MAX)
=150°C
T
A
=25°C
θ
JA
=90°C/W
10
Gate Charge Characteristics
8
V
DS
=16V
6
V
DS
=10V
4
2
I
D
=3A
0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs JunctionTemperature
5
I
D
, Maximum Drain Current(A)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
T
A
=25°C, V
GS
=10V, R
θJA
=90°C/W
I
D
, Drain Current(A)
10
R
DS(ON)
Limited
100
μ
s
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C,
V
GS
=10V, R
θJA
=90°C/W
Single Pulse
0.1
1
10
DC
0.01
0.01
100
50
V
DS
, Drain-Source Voltage(V)
MTC3586BDFA6
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
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