CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
BV
DSS
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2018.12.06
Page No. : 1/ 9
MTP2305N3
Features
-20V
-4.8A
27mΩ (typ.)
32mΩ (typ.)
37mΩ (typ.)
47mΩ (typ.)
I
D
@T
A
=25C, V
GS
=-4.5V
R
DSON
@V
GS
=-10V, I
D
=-4.5A
R
DSON
@V
GS
=-4.5V, I
D
=-4.2A
R
DSON
@V
GS
=-2.5V, I
D
=-2A
R
DSON
@V
GS
=-1.8V, I
D
=-1A
•
Advanced trench process technology
•
Super high density cell design for extremely low on resistance
•
Reliable and rugged
•
Compact and low profile SOT-23 package
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2305N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTP2305N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25C, V
GS
=-4.5V
(Note 1)
Continuous Drain Current @T
A
=70C, V
GS
=-4.5V
(Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation
(Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2018.12.06
Page No. : 2/ 9
Limits
-20
±12
-4.8
-3.8
-20
1.38
0.01
-55~+150
Unit
V
A
W
W/C
C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
(Note)
Thermal Resistance, Junction-to-Case, max
Symbol
R
θJA
R
θJC
Limit
90
75
Unit
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s ; 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
Min.
-20
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-0.65
-
-
-
27
32
37
47
9.5
1139
99
85
4.8
17.4
112.8
141.4
Max.
-
-
-1.2
±100
-1
-10
36
45
74
120
-
-
-
-
-
-
-
-
Unit
V
V/C
V
nA
µA
Test Conditions
V
GS
=0V, I
D
=-250µA
Reference to 25C, I
D
=-1mA
V
DS
=V
GS
, I
D
=-250µA
V
GS
=±12V, V
DS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V, Tj=70
C
I
D
=-4.5A, V
GS
=-10V
I
D
=-4.2A, V
GS
=-4.5V
I
D
=-2.0A, V
GS
=-2.5V
I
D
=-1.0A, V
GS
=-1.8V
V
DS
=-5V, I
D
=-2.8A
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
MTP2305N3
m
S
pF
V
DS
=-15V, V
GS
=0V, f=1MHz
ns
V
DS
=-15V, I
D
=-4.3A, V
GS
=-10V, R
D
=3.6
Ω
,
R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
14.6
1.8
4.1
-0.76
37.4
16
-
-
-
-1.2
-
-
nC
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2018.12.06
Page No. : 3/ 9
V
DS
=-16V, I
D
=-4.3A, V
GS
=-4.5V,
V
ns
nC
V
GS
=0V, I
SD
=-1.2A
I
F
=-4.3A, V
GS
=0V, dI
F
/dt=100A/µs
*Pulse Test : Pulse Width
300µs,
Duty Cycle2%
Recommended Soldering Footprint
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
-V
GS
=2V
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2018.12.06
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
1.4
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
1
0.8
0.6
0.4
-I
D
, Drain Current (A)
15
10V,9V,8V,7V,6V,5V,4V,3V,2.5V
10
-V
GS
=1.5V
5
I
D
=-250μA,
V
GS
=0V
0
0
1
2
3
4
-V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.4
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
-V
SD
, Source-Drain Voltage(V)
V
GS
=-1.8V
V
GS
=-2.5V
1.2
1
0.8
V
GS
=0V
Tj=25°C
Tj=150°C
0.6
0.4
0.2
V
GS
=-4.5V
V
GS
=-10V
10
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
4
8
12
16
-I
DR
, Reverse Drain Current (A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
1.8
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
From right to left
I
D
=-4.5A, -2A, -1A, -0.2A
1.6
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
V
GS
=-4.5V, I
D
=-4.2A
R
DS(ON)
@Tj=25°C : 32 mΩ typ.
MTP2305N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Spec. No. : C417N3
Issued Date : 2007.07.27
Revised Date : 2018.12.06
Page No. : 5/ 9
1.4
Normalized Threshold Voltage vs Junction
Tempearture
-V
GS(t h)
,Normalized Threshold
Voltage
Capacitance---(pF)
Ciss
1.2
I
D
=-1mA
1000
1
0.8
0.6
0.4
C
oss
100
Crss
I
D
=-250μA
10
0
4
8
12
16
-V
DS
, Drain-Source Voltage(V)
20
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
10
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance-(S)
1
-V
GS
, Gate-Source Voltage(V)
8
V
DS
=-16V
I
D
=-4.3A
6
4
0.1
V
DS
=-10V
Pulsed
Ta=25°C
2
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
100μs
Maximum Drain Current vs JunctionTemperature
6
-I
D
, Drain Current (A)
10
I
D
, Maxim um Drain Current(A)
5
4
3
2
1
0
T
A
=25°C, V
GS
=-4.5V, R
θJA
=90°C/W
1ms
1
T
A
=25°C, Tj=150°C
V
GS
=-4.5V, R
θJA
=90°C/W
Single Pulse
10ms
100ms
DC
0.1
0.01
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTP2305N3
CYStek Product Specification
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