CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C107Q8
Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 1/9
MTP4435AQ8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating package
BV
DSS
I
D
@ V
GS
=-10V, T
A
=25°C
R
DSON
@V
GS
=-10V, I
D
=-8A
R
DSON
@V
GS
=-4.5V, I
D
=-5A
-30V
-12.3A
12.3mΩ(typ.)
17.5mΩ(typ.)
Equivalent Circuit
MTP4435AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTP4435AQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTP4435AQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=-10V
Continuous Drain Current @ T
A
=70°C, V
GS
=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, I
D
=-12.3A, V
DD
=-15V
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
T
A
=70℃
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
Spec. No. : C107Q8
Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 2/9
Limits
-30
±25
-12.3
-9.8
-50
*1
-12.3
75.6
2.5
*2
3.1
*3
2
*3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
20
40
*3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
DSS
R
DS(ON)
G
FS
Dynamic
Ciss
Coss
Crss
*1
*1
Min.
-30
-1
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
12.3
17.5
19.7
1552
188
170
Max.
-
-2.5
±100
-1
-10
16
23
-
-
-
-
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±25V, V
DS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, Tj=125°C
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-10A
pF
V
DS
=-15V, V
GS
=0, f=1MHz
MTP4435AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8
Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 3/9
Electrical Characteristics(Cont.)
(Tj=25°C, unless otherwise specified)
Symbol
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Qg (V
GS
=10V)
*1, 2
Qg (V
GS
=4.5V)
*1, 2
Qgs
*1, 2
Qgd
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
10.2
18.6
69.8
17.2
32.9
16.3
5.1
7.1
6.6
-
-
-0.78
12.3
6.3
Max.
-
-
-
-
-
-
-
-
-
-3
-12
-1.2
-
-
Unit
ns
Test Conditions
V
DD
=-15V, I
D
=-1A,
V
GS
=-10V, R
G
=2.7
Ω
nC
Ω
A
V
ns
nC
V
DS
=-15V, I
D
=-10A, V
GS
=-10V
f=1MHz
I
S
=-3A, V
GS
=0V
I
F
=-3A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTP4435AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C107Q8
Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
-10V, -9V, -8V, -7V,-6V, -5V
-I
D
, Drain Current (A)
40
-4V
1.2
1
0.8
0.6
0.4
I
D
=-250
μ
A,
V
GS
=0V
30
20
10
0
0
1
2
3
4
-V
DS
, Drain-Source Voltage(V)
5
-3.5V
-3V
V
GS
=-2.5V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1.2
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-4V
-4.5V
-5V
-10V
-V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
Tj=25°C
100
10
Tj=150°C
0.4
0.2
1
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
4
8
12
16
-I
S
, Source Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
R
DS(on)
, Normalized Static Drain-Source
On-State Resistance
200
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-8A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 12.3 mΩ typ.
V
GS
=-10V, I
D
=-8A
MTP4435AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
-V
GS(th)
, normliz Threshold Voltage
1.4
1.2
Spec. No. : C107Q8
Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=-1mA
1
0.8
0.6
0.4
I
D
=-250μA
1000
C
oss
Crss
100
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
I
D
=-10A
G
FS
, Forward Transfer Admittance(S)
-V
GS
, Gate-Source Voltage(V)
10
V
DS
=-10V
V
DS
=-5V
1
V
DS
=-5V
Pulsed
T
A
=25°C
V
DS
=-15V
0.1
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
0
8
16
24
32
Qg, Total Gate Charge(nC)
40
Maximum Safe Operating Area
100
100
μ
s
1ms
10ms
Maximum Drain Current vs Junction Temperature
16
-I
D
, Maximum Drain Current(A)
14
12
10
8
6
4
2
0
25
T
A
=25°C, V
GS
=-10V, R
θ
JA
=40°C/W
-I
D
, Drain Current(A)
10
1
100ms
1s
0.1
T
A
=25°C, Tj=150°C, V
GS
=-10V
R
θ
JA
=40°C/W, Single Pulse
DC
0.01
0.01
0.1
1
10
-I
D
, Drain-Source Voltage(V)
100
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTP4435AQ8
CYStek Product Specification
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