CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2016.03.30
Page No. : 1/8
MTP4411AQ8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=-10V, T
A
=25°C
R
DSON
@V
GS
=-10V, I
D
=-5.3A
R
DSON
@V
GS
=-4.5V,I
D
=-4.2A
-30V
-5.3A
30mΩ(typ)
43mΩ(typ)
Equivalent Circuit
MTP4411AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTP4411AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=-10V, T
A
=25°C
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
(Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Note : 1.Surface mounted on FR-4 board, t≤10sec.
2.
Pulse width
≤300μs,
Duty Cycle≤2%
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2016.03.30
Page No. : 2/8
Symbol
BV
DSS
V
GS
I
D
I
DM
Pd
Tj
Tstg
Limits
-30
±25
-5.3
-24
2.5
0.02
-55~+150
-55~+150
Unit
V
A
W
W /
°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
Symbol
R
θJC
R
θJA
Value
25
50
(Note )
Unit
°C/W
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
-30
-
-
V
V
GS
=0V, I
D
=-250μA
V
GS(th)
-1
-1.5
-2.5
V
V
DS
=V
GS
, I
D
=-250μA
I
GSS
-
-
±100
nA
V
GS
=±25V, V
DS
=0V
I
DSS
-
-
-1
μA
V
DS
=-30V, V
GS
=0V
-
30
40
I
D
=-5.3A, V
GS
=-10V
*R
DS(ON)
mΩ
-
43
60
I
D
=-4.2A, V
GS
=-4.5V
*G
FS
-
8
-
S
V
DS
=-5V, I
D
=-5.3A
Dynamic
Ciss
-
630
-
pF
V
DS
=-15V, V
GS
=0V, f=1MHz
Coss
-
76
-
Crss
-
64
-
*t
d(ON)
-
6
-
*t
r
-
17.4
-
V
DD
=-15V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
ns
*t
d(OFF)
-
63.6
-
*t
f
-
33.8
-
*Qg
-
14.2
-
nC
V
DS
=-15V, V
GS
=-10V, I
D
=-5.3A
*Qgs
-
2.1
-
*Qgd
-
2.8
-
Source Drain Diode
*V
SD
-
-0.79
-1.2
V
V
GS
=0V, I
S
=-1.7A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
18
-I
D
, Drain Current (A)
16
14
12
10
8
6
4
2
0
0
2
4
6
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2016.03.30
Page No. : 3/8
Brekdown Voltage vs Ambient Temperature
1.4
-10V,-9V,-8V,-7V,-6V,-5V
-4V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
-3.5V
1
-3V
0.8
I
D
=-250
μ
A,
V
GS
=0V
V
GS
=-2.5V
0.6
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
-V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
0.4
0.2
Tj=25°C
100
V
GS
=-4.5V
Tj=150°C
V
GS
=-10V
10
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
2
4
6
8
-I
S
, Source Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
380
340
300
260
220
180
140
100
60
20
0
2
R
DS(on)
, Normalized Static Drain-Source
On-State Resistance
420
I
D
=-5.3A
2
V
GS
=-10V, I
D
=-5.3A
R
DS(ON)
@Tj=25°C : 30 mΩ typ.
1.6
1.2
0.8
V
GS
=-4.5V, I
D
=-4.2A
R
DS(ON)
@Tj=25°C : 43mΩ typ.
0.4
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, NormalizedThreshold Voltage
1000
Ciss
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2016.03.30
Page No. : 4/8
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=-250μA
I
D
=-1mA
Capacitance---(pF)
100
C
oss
Crss
10
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
10
-V
GS
, Gate-Source Voltage(V)
8
6
4
2
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
2
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
1
0.1
V
DS
=-10V
Pulsed
T
A
=25°C
V
DS
=-15V
I
D
=-5.3A
0.01
0.001
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Safe Operating Area
100
R
DS(ON)
limited
Maximum Drain Current vs Junction Temperature
7
-I
D
, Drain Current(A)
10
10
μ
s
100
μ
s
-I
D
, Maximum Drain Current(A)
6
5
4
3
2
1
0
T
A
=25°C, V
GS
=-10V
1
1ms
10ms
0.1
T
A
=25°C, Tj=150°C, V
GS
=-10V
Single Pulse
DC
100ms
0.01
0.01
0.1
1
10
-I
D
, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
18
16
-I
D
, Drain Current(A)
V
DS
=-10V
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2016.03.30
Page No. : 5/8
Single Pulse Power Rating, Junction to Ambient
300
250
T
J(MAX)
=150°C
T
A
=25°C
R
θ
JA
=50°C/W
12
10
8
6
4
2
0
0
1
2
3
4
5
-V
GS
, Gate-Source Voltage(V)
Power (W)
14
200
150
100
50
0
0.00001 0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
D=0.5
r(t), Normalized Effective Transient
Thermal Resistance
0.2
0.1
0.05
1.R
θ
JA
(t)=r(t)*R
θJA
2.Duty Factor, D=t
1
/t
2
3.T
JM
-T
A
=P
DM
*R
θ
JA
(t)
4.R
θJA
=50°C/W
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
t
1
, Square Wave Pulse Duration(s)
1.E-01
1.E+00
1.E+01
Recommended Soldering Footprint
MTP4411AQ8
CYStek Product Specification
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