CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2018.04.12
Page No. : 1/ 9
MTB20N06KJ3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
ESD protected gate
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=8A
R
DS(ON)
@V
GS
=4.5V, I
D
=6A
R
DS(ON)
@V
GS
=4V, I
D
=4A
60V
38A
8.3A
13.4 mΩ(typ)
15.9 mΩ(typ)
17.2 mΩ(typ)
Symbol
MTB20N06KJ3
Outline
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Package
TO-252
MTB20N06KJ3-0-T3-G
(Pb-free lead plating and halogen-free package)
Device
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20N06KJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2018.04.12
Page No. : 2/ 9
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Continuous Drain Current @T
A
=25°C, V
GS
=10V
Continuous Drain Current @T
A
=70°C, V
GS
=10V
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, I
D
=20 Amps,
V
DD
=30V
Repetitive Avalanche Energy
T
C
=25°C
T
C
=100°C
Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
60
±20
38*
24*
8.3
6.6
136*
20
100
2.1
50
20
2.5
1.6
-55~+150
V
A
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2.5
50
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25°C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150
°C.
The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25°C.
4. 100% tested by condition of V
DD
=15V, I
D
=2.4A, L=1mH, V
GS
=10V.
MTB20N06KJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
60
-
1
-
-
-
-
-
-
-
Typ.
-
50
-
14
-
-
-
13.4
15.9
17.2
18.5
1.6
8.4
8.6
17.6
39.8
20
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2018.04.12
Page No. : 3/ 9
Max.
-
-
2.5
-
±
10
1
5
16.8
21.5
26.0
-
-
-
-
-
-
-
-
-
-
24
96
1.2
-
-
Unit
V
mV/°C
V
S
μA
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= 10V, I
D
=1mA
V
DS
=5V, I
D
=5A
V
GS
=
±
16V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
GS
=4V, I
D
=4A
V
DD
=48V, I
D
=22A,V
GS
=10V
V
DD
=30V, I
D
=1A, V
GS
=10V,
R
G
=6
Ω
m
Ω
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
ns
736
140
70
-
-
0.8
14
8.5
pF
V
GS
=0V, V
DS
=20V, f=1MHz
A
V
ns
nC
I
S
=8A, V
GS
=0V
V
GS
=0V, I
F
=22A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTB20N06KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
90
5V
4.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2018.04.12
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
1.4
80
I
D
, Drain Current(A)
70
60
50
40
30
20
10
0
0
2
10V,9V,8V,7V,6V
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
4V
3.5V
V
GS
=
3V
4
6
8
, Drain-Source Voltage(V)
V
DS
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
V
GS
=4V
V
SD
, Source-Drain Voltage(V)
1.0
0.8
0.6
0.4
0.2
Tj=25°C
10
V
GS
=4.5V
V
GS
=10V
Tj=150°C
1
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=8A
2.4
2.0
1.6
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
V
GS
=10V, I
D
=8A
R
DS(ON)
@Tj=25°C : 13.4mΩ typ.
V
GS
=4.5V, I
D
=6A
R
DS(ON)
@Tj=25°C : 15.9mΩ typ.
MTB20N06KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
1.0
0.8
0.6
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2018.04.12
Page No. : 5/ 9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
1000
Ciss
I
D
=1mA
C
oss
100
Crss
f=1MHz
I
D
=250
μ
A
10
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
Gate Charge Characteristics
10
I
D
=22A
V
GS
, Gate-Source Voltage(V)
10
8
6
4
V
DS
=30V
1
V
DS
=5V
Pulsed
Ta=25°C
V
DS
=48V
0.1
2
0
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
2
4
6
8 10 12 14 16
Qg, Total Gate Charge(nC)
18
20
Maximum Safe Operating Area
1000
1ms
100
μ
s
Maximum Drain Current vs Case Temperature
45
I
D
, Maximum Drain Current(A)
10
μ
s
40
35
30
25
20
15
10
5
0
25
Tj(max)=150°C,R
θ
JC
=2.5°C/W,
V
GS
=10V, Single Pulse
I
D
, Drain Current(A)
100
R
DS(ON)
Limited
10ms
100ms
10
1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V,R
θ
JC
=2.5°C/W
Single Pulse
1s
DC
0.1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
150
T
C
, Case Temperature(°C)
175
MTB20N06KJ3
CYStek Product Specification
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