CYStech Electronics Corp.
N- and P-Channel Enhancement Mode Power MOSFET
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 1/13
MTC3587DL8
Features
BV
DSS
I
D
@ T
A
=25°C
•
Simple drive requirement
R
DSON
(
TYP
.)
•
Low gate charge
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
N-CH
20V
4.9A(V
GS
=4.5V)
32mΩ(V
GS
=4.5V)
43mΩ(V
GS
=2.5V)
62mΩ(V
GS
=1.8V)
P-CH
-20V
-3.9A(V
GS
=-4.5 V)
50mΩ(V
GS
=-4.5V)
62mΩ(V
GS
=-2.5V)
81mΩ(V
GS
=-1.8V)
Equivalent Circuit
MTC3587DL8
Outline
DFNWB3×2-8L-B
G：Gate S：Source D：Drain
Ordering Information
Device
MTC3587DL8-0-T1-G
Package
DFNWB3×2-8L-B
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC3587DL8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
(Note 1)
Continuous Drain Current @T
A
=70
°C
(Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation @T
A
=25°C
(Note 1)
Maximum Power Dissipation @T
A
=70°C
(Note 1)
Operating Junction and Storage Temperature
Symbol
BV
DSS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 2/13
Limits
N-channel P-channel
(Q1)
(Q2)
20
-20
±8
±8
4.9
-3.9
3.9
-3.1
30
-23
1.5
0.96
-55~+150
Unit
V
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
Rɵ
JA
Rɵ
JC
Limit
85
25
Unit
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
2.
Pulse width limited by maximum junction temperature.
N-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
MTC3587DL8
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
12
-
-
-
-
32
43
62
6.2
404
48
52
5
16.6
24.4
7.6
Max.
-
-
1.2
±100
1
10
45
70
120
-
-
-
-
-
-
-
-
Unit
V
mV/°C
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±8V, V
DS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=16V, V
GS
=0V, Tj=70°C
V
GS
=4.5V, I
D
=4.4A
V
GS
=2.5V, I
D
=4.1A
V
GS
=1.8V, I
D
=1.9A
V
DS
=5V, I
D
=3A
pF
V
DS
=15V, V
GS
=0V, f=1MHz
ns
V
DS
=10V, I
D
=4.4A, V
GS
=4.5V, R
G
=2.5
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
5.9
0.9
1.5
0.85
5.8
1.8
-
-
-
1.2
-
-
nC
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 3/13
V
DS
=10V, I
D
=4.4A, V
GS
=4.5V
V
ns
nC
V
GS
=0V, I
S
=2.5A
I
F
=1.7A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
P-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
-20
-
-0.5
-
-
-
-
-
-
-
Typ.
-
-13
-
-
-
-
50
62
81
9
1048
74
59
11.6
22
77.8
28.2
11.6
1.8
2.2
-0.85
7.3
2.4
Max.
-
-
-1.2
±100
-1
-25
80
95
130
-
-
-
-
-
-
-
-
-
-
-
-1.2
-
-
Unit
V
mV/°C
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=-250μA
Reference to 25°C, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±8V, V
DS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V, Tj=70°C
V
GS
=-4.5V, I
D
=-3.2A
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, I
D
=-1A
V
DS
=-5V, I
D
=-3A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
pF
V
DS
=-15V, V
GS
=0V, f=1MHz
ns
V
DS
=-10V, I
D
=-3.2A, V
GS
=-4.5V, R
G
=2.5
Ω
nC
V
DS
=-10V, I
D
=-3.2A, V
GS
=-4.5V
V
ns
nC
V
GS
=0V, I
S
=-2.5A
I
F
=-1.7A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTC3587DL8
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-channel Typical Characteristics
Typical Output Characteristics
30
25
I
D
, Drain Current(A)
20
2
.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 4/13
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
7V, 6V, 5V, 4V, 3V
15
10
V
GS
=2V
5
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
0.8
Tj=150°C
Tj=25°C
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
0.6
0.4
0.2
V
GS
=2.5V
V
GS
=-4.5V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=4.4A
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=4.5V, I
D
=4.4A
R
DS(ON)
@Tj=25°C : 32mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC3587DL8
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 5/13
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
1000
Capacitance---(pF)
1
0.8
0.6
0.4
I
D
=250μA
C
oss
100
Crss
10
0
4
8
12
16
V
DS
, Drain-Source Voltage(V)
20
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
10
V
DS
=5V
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
1
V
DS
=10V
V
GS
, Gate-Source Voltage(V)
8
6
4
2
0
V
DS
=10V
I
D
=4.4A
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
I
D
, Drain Current(A)
1
10
0
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Safe Operating Area
100
100
μ
s
1ms
Maximum Drain Current vs JunctionTemperature
6
I
D
, Drain Current(A)
10
R
DS(ON)
Limited
I
D
, Maximum Drain Current(A)
5
4
3
2
1
0
T
A
=25°C, V
GS
=4.5V
R
θ
JA
=85°C/W
1
10ms
100ms
1s
DC
0.1
T
A
=25°C, Tj=150°C, V
GS
=4.5V
R
θ
JA
=85°C/W, Single Pulse
0.01
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
150
175
T
J
, Junction Temperature(°C)
CYStek Product Specification
MTC3587DL8
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