RF Low Noise FET
CE3512K2
12 GHz Super Low Noise FET in Hollow
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Plastic PKG
DESCRIPTION
PACKAGE
Super Low Noise and High Gain
Hollow (Air Cavity) Plastic package
Micro-X plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
CE3512K2
Order Number
CE3512K2-C1
Package
Micro-X plastic
package
Marking
C5
Description
•
Embossed tape 8 mm wide
•
Pin 4 (Gate) faces the
perforation side of the tape
•
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0018-05 (Issue A)
1
CE3512K2
PIN CONFIGURATION AND
INTERNAL BLOCK DIAGRAM
Pin No.
1
2
3
4
Pin Name
Source
Drain
Source
Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25˚C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Operation Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
T
op
Rating
4.0
-3.0
I
DSS
80
125
+150
-55 to +125
-55 to +125
Note
Unit
V
V
mA
µA
mW
°C
°C
°C
Note
Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4
RECOMMENDED OPERATING RANGE
(T
A
= +25˚C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Symbol
V
DS
I
D
MIN.
+1
5
TYP.
+2
10
MAX.
+3
15
Unit
V
mA
This document is subject to change without notice.
2
CE3512K2
ELECTRICAL CHARACTERISTICS
(T
A
= +25˚C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS(off)
Gm
NF
Ga
Condition
V
GS
= -3.0V
V
DS
= 2V, V
GS
= 0V
V
DS
= 2V, I
D
= 120µA
V
DS
= 2V, I
D
= 10mA
V
DS
= 2V, I
D
= 10mA,
f = 12GHz
MIN.
-
27
-1.10
54
-
12.5
TYP.
0.4
47.5
-0.75
69
0.30
13.7
MAX.
10
68
-0.39
-
0.50
-
Unit
µA
mA
V
mS
dB
dB
This document is subject to change without notice.
3
CE3512K2
TYPICAL CHARACTERISTICS :
(TA=+25
℃
, unless otherwise specified)
TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT VS.
GATE TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE &
ASSOCIATED GAIN VS. DRAIN CURRENT
This document is subject to change without notice.
4
CE3512K2
S-PARAMETERS
S-Parameters are available on CEL’s
Part Summary page
under S-parameters
RECOMMENDED SOLDERING CONDITIONS
Recommended Soldering Conditions are available on CEL’s
Part Summary page
under Associated Documents
PACKAGE DIMENSIONS
Micro-X plastic package
This document is subject to change without notice.
5
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