BTA204S-600B
3Q Hi-Com Triac
31 May 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in three quadrants only
3. Applications
•
•
•
General purpose motor control circuits
Home appliances
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
Typ
-
-
-
-
-
-
Max
600
4
25
27
125
50
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA204S-600B
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
1000
Typ
-
-
-
1.4
-
Max
50
50
30
1.7
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 4 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Dynamic characteristics
dI
com
/dt
6
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
DPAK (SOT428)
Simplified outline
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
BTA204S-600B
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
31 May 2018
2 / 14
WeEn Semiconductors
BTA204S-600B
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
12
I
T(RMS )
(A)
10
8
003aag083
Conditions
Min
-
Max
600
4
25
27
3.1
100
2
5
0.5
150
125
003aad615
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 100 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
5
I
T(RMS)
(A)
4
107 °C
3
6
2
4
2
0
10
-2
1
10
-1
1
10
s urge duration (s)
0
-50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 107 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
31 May 2018
3 / 14
WeEn Semiconductors
BTA204S-600B
3Q Hi-Com Triac
8
P
tot
(W)
6
003aag081
conduction
angle
(degrees)
30
60
90
120
180
form
factor
α
4
2.8
2.2
1.9
1.57
α = 180 °
α
101
T
mb(max)
104 (°C)
107
110
113
116
119
122
120 °
90 °
60 °
30 °
4
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TS M
(A)
003aag085
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
31 May 2018
4 / 14
WeEn Semiconductors
BTA204S-600B
3Q Hi-Com Triac
30
I
TSM
(A)
003aag086
20
10
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
31 May 2018
5 / 14
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