IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT150S-600R
SCR
1 November 2016
Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a TO252 (DPAK) surface mountable plastic package.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
•
•
General purpose switching
Protection Circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
half sine wave; T
mb
≤ 111 °C;
Fig. 1
half sine wave; T
mb
≤ 111 °C;
Fig. 2;
Fig. 3
Conditions
[1]
Min
-
-
-
-
-
-
[2]
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
-
-
-
Typ
-
-
-
-
-
-
-
15
50
Max
600
600
2.5
4
35
38
125
200
-
Unit
V
V
A
A
A
A
°C
µA
V/µs
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
T
j
I
GT
dV
D
/dt
junction temperature
gate trigger current
rate of rise of off-state
voltage
Static characteristics
Dynamic characteristics
WeEn Semiconductors
BT150S-600R
SCR
[1]
[2]
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/μs.
Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
K
A
G
A
cathode
anode[1]
gate
mounting base; connected to
anode
1
2
3
Simplified outline
mb
Graphic symbol
A
G
sym037
K
DPAK (TO252N)
[1]
It is not possible to connect to pin 2 of the TO252 package.
6. Ordering information
Table 3. Ordering information
Type number
BT150S-600R
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
TO252N
7. Marking
Table 4. Marking codes
Type number
BYV10ED-600P
Marking code
BYV10ED-600P
BT150S-600R
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
2 / 12
WeEn Semiconductors
BT150S-600R
SCR
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state current half sine wave; T
mb
≤ 111 °C;
Fig. 1
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak reverse gate
voltage
peak gate power
average gate power
storage temperature
junction temperature
[2]
over any 20 ms period
2
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Max
600
600
2.5
4
35
38
6.1
50
2
5
5
0.5
150
125
Unit
V
V
A
A
A
A
A²s
A/µs
A
V
W
W
°C
°C
half sine wave; T
mb
≤ 111 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; SIN
I
T
= 10 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
[2]
2
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/μs.
Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
BT150S-600R
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
3 / 12
WeEn Semiconductors
BT150S-600R
SCR
5
P
tot
(W)
4
2.8
3
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.5
1
1.5
2
form
factor
a
4
2.8
2.2
1.9
1.57
2.5
α
aaa-011899
a = 1.57
1.9
2.2
2
1
0
l
T(AV)
(A)
3
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
5
l
T(RMS)
(A)
4
aaa-011910
111 °C
I
T(RMS)
(A)
10
8
12
aaa-012052
3
6
2
4
1
2
0
10
-2
0
-50
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 111 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
BT150S-600R
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
4 / 12
MEMS传感器
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