IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT131-600E
4Q Triac
4 October 2016
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 plastic package. This sensitive
gate "series E" triac is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing with low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
•
•
•
Air conditioner indoor fan control
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 51 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
600
1
12.5
13.7
125
10
10
10
Unit
V
A
A
A
°C
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT131-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
50
Typ
-
1.3
1.2
-
Max
10
10
1.5
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 1.4 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; R
GT1(ext)
= 1 kΩ
V
D
= 400 V; T
j
= 125 °C; dI
com
/
dt = 0.5 A/ms; I
T
= 1 A; gate open
circuit
Dynamic characteristics
dV
com
/dt
5
-
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
BT131-600E
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BT131-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
2 / 13
WeEn Semiconductors
BT131-600E
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
1
12.5
13.7
0.78
50
50
10
50
2
5
0.1
150
125
003aab042
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
lead
≤ 51 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 20 mA
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
1.2
I
T(RMS)
(A)
0.8
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aab039
-
-
over any 20 ms period
-
-40
-
3
I
T(RMS)
(A)
2
51.2 °C
0.4
1
0
- 50
0
50
100
T
lead (°C)
150
0
10
- 2
10
- 1
1
10
surge duration (s)
T
lead
= 51.2 °C
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
f = 50 Hz; T
lead
= 51.2 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT131-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
3 / 13
WeEn Semiconductors
BT131-600E
4Q Triac
1.5
P
tot
(W)
1
α
α
003aab038
35
T
lead(max)
(°C)
65
α =180°
120°
90°
60°
30°
0.5
95
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
125
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
16
I
TSM
(A)
12
003aab041
I
T
I
TSM
t
T
T
j
= 25 °C max
8
4
0
1
10
10
2
n
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
4 / 13
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