BT151-500L
SCR
22 February 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use
in applications requiring sensitive gate, good bidirectional blocking voltage capability, high surge
current capability and high thermal cycling performance.
2. Features and benefits
•
•
•
•
Good bidirectional blocking voltage capability
High surge current capability
High thermal cycling performance
Sensitive gate
3. Applications
•
•
•
•
Ignition circuits
Motor control
Protection circuits
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
V
RRM
I
TSM
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
T
j
I
T(AV)
I
T(RMS)
junction temperature
average on-state
current
RMS on-state current
half sine wave; T
mb
≤ 109 °C;
Fig. 1
half sine wave; T
mb
≤ 109 °C;
Fig. 2;
Fig. 3
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
Conditions
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
500
500
120
132
125
7.5
12
Unit
V
V
A
A
°C
A
A
Static characteristics
I
GT
gate trigger current
-
2
5
mA
Dynamic characteristics
WeEn Semiconductors
BT151-500L
SCR
Symbol
dV
D
/dt
Parameter
rate of rise of off-state
voltage
Conditions
V
DM
= 335 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
Min
200
Typ
1000
Max
-
Unit
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
K
A
G
A
cathode
anode
gate
mounting base; connected to
anode
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BT151-500L
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BT151-500L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
22 February 2018
2 / 12
WeEn Semiconductors
BT151-500L
SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state current half sine wave; T
mb
≤ 109 °C;
Fig. 1
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak reverse gate
voltage
peak gate power
average gate power
storage temperature
junction temperature
15
P
tot
(W)
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
α
α
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
500
500
7.5
12
120
132
72
50
2
5
5
0.5
150
125
Unit
V
V
A
A
A
A
A²s
A/µs
A
V
W
W
°C
°C
half sine wave; T
mb
≤ 109 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; SIN
I
G
= 10 mA
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
over any 20 ms period
-
-40
-
003aab830
105.5
T
mb(max)
a = 1.57
1.9
2.2
2.8
(°C)
108.8
112.0
115.3
118.5
121.8
5
0
I
T(AV)
(A)
8
125
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
BT151-500L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
22 February 2018
3 / 12
WeEn Semiconductors
BT151-500L
SCR
25
I
T(RMS)
(A)
20
001aaa954
16
I
T(RMS)
(A)
12
001aaa999
15
8
10
4
5
0
10
- 2
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
T
mb
(°C)
150
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
10
3
Fig. 3. RMS on-state current as a function of mounting
base temperature; maximum values
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25 °C max
10
10
- 5
10
- 4
10
- 3
t
p
(s)
10
- 2
Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT151-500L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
22 February 2018
4 / 12
WeEn Semiconductors
BT151-500L
SCR
160
I
TSM
(A)
120
003aab829
80
I
T
40
I
TSM
0
t
t
p
T
j
initial = 25 °C max
1
10
10
2
number of cycles
10
3
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-500L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
22 February 2018
5 / 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
