IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT148-600R
SCR
13 March 2014
Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended
for use in general purpose switching and phase control applications. These devices are
intended to be interfaced directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
2. Features and benefits
•
•
•
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
3. Applications
•
•
•
Adapters
Battery powered applications
Industrial automation
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
RMS on-state current
half sine wave; T
mb
≤ 113 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
[1]
TO
-22
0
AB
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
600
600
35
4
Unit
V
V
A
A
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
-
15
200
µA
Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BT148-600R
SCR
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
A
cathode
anode
gate
mounting base; connected to
anode
Simplified outline
Graphic symbol
A
G
sym037
K
1
2
3
SIP3 (SOT82)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT148-600R
SIP3
Description
plastic single-ended package; 3 leads (in-line)
Version
SOT82
Type number
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
2 / 13
NXP Semiconductors
BT148-600R
SCR
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
mb
≤ 113 °C;
Fig. 1
half sine wave; T
mb
≤ 113 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
600
2.5
4
35
38
6.1
50
2
5
5
0.5
150
125
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
[1]
[2]
2
t
p
= 10 ms; SIN
I
T
= 10 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
over any 20 ms period
-
-40
[2]
-
Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
3 / 13
NXP Semiconductors
BT148-600R
SCR
5
P
tot
(W)
4
2.8
3
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.5
1
1.5
2
form
factor
a
4
2.8
2.2
1.9
1.57
2.5
α
aaa-011899
a = 1.57
1.9
2.2
2
1
0
l
T(AV)
(A)
3
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
Total power dissipation as a function of average on-state current; maximum values
5
l
T(RMS)
(A)
4
aaa-011901
113 °C
l
T(RMS)
(A)
10
8
12
aaa-011896
3
6
2
4
1
2
0
10
-2
0
-50
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 3.
f = 50 Hz; T
mb
= 113 °C
RMS on-state current as a function of surge
duration; maximum values
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
4 / 13
淘e淘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
