BT137S-600D
4Q Triac
22 August 2017
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package intended for use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series
D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
Typ
-
-
-
-
-
2.5
3.5
Max
600
8
65
71
125
5
5
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT137S-600D
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
-
Typ
3.5
6.5
1.5
1.3
5
Max
5
10
10
1.65
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 10 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
=
67% of V
DRM
); exponential waveform;
R
GT1(ext)
= 1 kΩ
Dynamic characteristics
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
DPAK (SOT428)
Simplified outline
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
BT137S-600D
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BT137S-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
22 August 2017
2 / 13
WeEn Semiconductors
BT137S-600D
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
10
I
T(RMS)
(A)
8
003aae689
Conditions
Min
-
Max
600
8
65
71
21
50
2
5
0.5
150
125
003aae692
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 20 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
25
I
T(RMS)
(A)
20
6
15
4
10
2
5
0
- 50
0
50
100
T
mb
(°C)
150
0
10- 2
10- 1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
T
mb
≤ 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT137S-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
22 August 2017
3 / 13
WeEn Semiconductors
BT137S-600D
4Q Triac
12
P
tot
(W)
8
003aae690
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
α = 180°
α
120°
90°
α
60°
30°
4
0
0
2
4
6
8
I
T(RMS)
(A)
10
α = conduction angle
a = form factor = I
T(RMS)
/I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
003aae691
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
- 5
10
- 4
10
- 3
10
- 2
t
p
(s)
10
- 1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT137S-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
22 August 2017
4 / 13
WeEn Semiconductors
BT137S-600D
4Q Triac
80
I
TSM
(A)
60
003aae693
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137S-600D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
22 August 2017
5 / 13
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