SW47N65K2
N-channel Enhanced mode TO-247 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 56mΩ)@V
GS
=10V
Low Gate Charge (Typ 103nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED, UPS, Charge, Servicer
TO-247
BV
DSS
: 650V
I
D
: 47A
R
DS(ON)
: 56mΩ
1
2
2
3
1
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
SW T 47N65K2
Marking
SW47N65K2
Package
TO-247
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
dv/dt
P
D
T
STG
, T
J
T
L
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
MOSFET dv/dt ruggedness (@VDS=0~400V)
Peak diode recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
(note 3)
(note 2)
(note 1)
(note 1)
Parameter
Value
650
47*
30*
188
±
30
1463
118
30
20
338
2.7
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
0.37
35
Unit
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2017. Rev. 2.0
1/6
SW47N65K2
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=650V, V
GS
=0V
Drain to source leakage current
V
DS
=520V, T
C
=125
o
C
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Parameter
Test conditions
Min.
Typ.
Max.
Unit
650
0.58
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
Gate threshold voltage
Drain to source on state resistance
Forward transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=23A
V
DS
=30V, I
D
=23A
2.5
56
49
4.5
72
V
mΩ
S
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=520V, V
GS
=10V, I
D
=47A ,
I
g
=5.5mA
(note 4,5)
V
DS
=0V, Scan F mode
V
DS
=325V, I
D
=47A, R
G
=25Ω,
V
GS
=10V
(note 4,5)
V
GS
=0V, V
DS
=200V, f=1MHz
4515
154
2.2
52
100
252
102
103
25
37
1.2
Ω
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=47A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI
F
/dt=100A/us
445
7.2
Min.
Typ.
Max.
47
188
1.4
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =45.7mH, IAS =8A, VDD=50V, RG=25Ω, Starting TJ = 25
o
C
3.
I
SD
≤ 20A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2017. Rev. 2.0
2/6
SW47N65K2
Fig. 1. On-state characteristics
Fig. 2. Transfer Characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig 5. Breakdown voltage variation
vs. junction temperature
Fig. 6. On-resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2017. Rev. 2.0
3/6
SW47N65K2
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 9. Maximum safe operating area
Fig. 10. Transient thermal response curve
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2017. Rev. 2.0
4/6
SW47N65K2
Fig. 11. Gate charge test circuit & waveform
Fig. 12. Switching time test circuit & waveform
V
DS
R
L
90%
R
GS
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
10%
t
d(off)
t
f
10V
IN
DUT
t
ON
t
OFF
Fig. 13. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2017. Rev. 2.0
5/6
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