SW15P03
P-channel Enhanced mode SOP-8/DFN3*3 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 14mΩ)@V
GS
=-4.5V
Low R
DS(ON)
(Typ 10mΩ)@V
GS
=-10V
Low Gate Charge (Typ 48nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Adaptor Input Switch
for Notebook PC
SOP-8
D
D
D
D
S
S
S
G
DFN3*3
BV
DSS
: -30V
I
D
: -15A
10mΩ @V
GS
=-10V
D
R
DS(ON)
: 14mΩ @V
GS
=-4.5V
SOP-8/DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
G
S
Order Codes
Item
1
2
Sales Type
SW K 15P03
SW H 15P03
Marking
SW15P03
SW15P03
Package
SOP-8
DFN3*3
Packaging
REEL
REEL
Absolute maximum ratings
Value
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
dv/dt
P
D
T
STG
, T
J
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T
a
=25
o
C)
Derating factor above 25
o
C
Operating junction temperature & storage temperature
(note 2)
(note 3)
2.5
0.02
(note 1)
Parameter
SOP-8
-30
-15*
-9.5*
-60
±
25
81
5
2.1
0.017
-55 ~ + 150
DFN3*3
V
A
A
A
V
mJ
V/ns
W
W/
o
C
o
C
Unit
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
R
thja
Parameter
Thermal resistance, Junction to ambient（note）
SOP-8
50
DFN3*3
60
Unit
o
C/W
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
SOP-8： 50
o
C/W on a 1 in
2
pad of 2oz copper.
DFN3*3：60
o
C/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0
1/6
SW15P03
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V
GS
=0V, I
D
=-250uA
I
D
=-250uA, referenced to 25
o
C
V
DS
=-30V, V
GS
=0V
I
DSS
Drain to source leakage current
V
DS
=-24V, T
C
=125
o
C
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
Drain to source on state resistance
Forward transconductance
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-7.5A
V
GS
=-10V, I
D
=-7.5A
V
DS
=-10V, I
D
=-7.5A
-1
14
10
29
-2.5
22
14
V
mΩ
mΩ
S
V
GS
=25V, V
DS
=0V
100
nA
V
GS
=-25V, V
DS
=0V
-50
-100
uA
nA
-30
0.02
-1
V
V/
o
C
uA
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=0V, Scan F mode
V
DS
=-24V, V
GS
=-10V, I
D
=-15A
(note 4,5)
V
DS
=-15V, I
D
=-15A, R
G
=25Ω,
V
GS
=-10V
(note 4,5)
V
GS
=0V, V
DS
=-15V, f=1MHz
3290
344
277
15
90
214
150
48
7
10
14
Ω
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=-15A, V
GS
=0V
I
S
=-15A, V
GS
=0V,
dI
F
/dt=100A/us
17
3.5
Min.
Typ.
Max.
-15
-60
-1.4
Unit
A
A
V
ns
nC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =4.5mH, I
AS
=-6A, V
DD
= -25V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤-15A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0
2/6
SW15P03
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0
3/6
SW15P03
Fig. 7. Capacitance Characteristics
Fig. 8. Maximum safe operating area（SOP-8）
Fig. 9. Maximum safe operating area（DFN3*3）
Fig. 10. Transient thermal response curve（SOP-8）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0
4/6
SW15P03
Fig. 11. Transient thermal response curve（DFN3*3）
Fig. 12. Gate charge test circuit & waveform
V
GS
Q
G
-10V
Q
GS
Q
GD
Charge(nC)
Fig. 13. Switching time test circuit & waveform
V
IN
R
L
10%
10%
R
GS
V
DS
V
DD
V
DS
t
d(on)
t
r
90%
t
d(off)
t
f
-10V
IN
DUT
t
ON
t
OFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0
5/6
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