RU1HP60R
P-Channel Advanced Power MOSFET
Features
• -100V/-60A,
R
DS (ON)
=18mΩ(Typ.)@V
GS
=-10V
Pin Description
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO220
Applications
•Inverters
D
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
-100
V
±25
175
-55 to 175
-60
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
①
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=-10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
-240
-60
A
A
②
-42
188
W
94
0.8
62.5
°C/W
°C/W
P
D
R
θJC
R
θJA
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
③
Avalanche Energy, Single Pulsed
400
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com
RU1HP60R
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RU1HP60R
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=-250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
DS
=-100V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±25V, V
DS
=0V
-100
-1
-30
-2
-4
±100
18
25
V
µA
V
nA
mΩ
Drain-Source On-state Resistance V
GS
=-10V, I
DS
=-60A
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=-30A, V
GS
=0V
I
SD
=-60A, dl
SD
/dt=100A/µs
175
620
-1.5
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-50V,
Frequency=1.0MHz
2
4200
615
380
27
Ω
pF
V
DD
=-50V,I
DS
=-60A,
V
GEN
=-10V,R
G
=6Ω
83
145
40
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-80V, V
GS
=-10V,
I
DS
=-60A
164
34
50
nC
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature.
③Limited
by T
Jmax
, I
AS
=-40A, V
DD
=-60V, R
G
= 50Ω, Starting T
J
= 25°C.
④Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed
by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
2
www.ruichips.com
℃
RU1HP60R
Ordering and Marking Information
Device
RU1HP60R
Marking
RU1HP60R
Package
TO220
Packaging Quantity Reel Size Tape width
Tube
50
-
-
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
3
www.ruichips.com
℃
RU1HP60R
Typical Characteristics
200
180
Power Dissipation
70
60
Drain Current
P
D
- Power (W)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
-I
D
- Drain Current (A)
160
50
40
30
20
10
VGS=-10V
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
Safe Operation Area
100
Drain Current
150
125
100
75
50
25
0
Ids=-60A
-I
D
- Drain Current (A)
R
DS(ON)
limited
10
DC
1
10µs
100µs
1ms
10ms
0.1
0.01
T
C
=25°C
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
-V
DS
- Drain-Source Voltage (V)
-V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
R
θJC
=
0.8°C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
4
www.ruichips.com
℃
RU1HP60R
Typical Characteristics
100
Output Characteristics
100
Drain-Source On Resistance
-I
D
- Drain Current (A)
-10V
80
-8V
-6V
R
DS(ON)
- On Resistance (mΩ)
80
60
60
-5V
40
40
20
-10V
20
-3V
0
0
1
2
3
4
5
0
0
30
60
90
120
-V
DS
- Drain-Source Voltage (V)
2.5
-I
D
- Drain Current (A)
100
Drain-Source On Resistance
V
GS
=-10V
I
D
=-60A
Source-Drain Diode Forward
Normalized On Resistance
-I
S
- Source Current (A)
2.0
10
T
J
=175°C
1.5
T
J
=25°C
1
1.0
0.5
T
J
=25°C
Rds(on)=18mΩ
0.0
-50
-25
0
25
50
75
100
125
150
0.1
0.3
0.6
0.9
1.2
1.5
1.8
T
J
- Junction Temperature (°C)
-V
SD
- Source-Drain Voltage (V)
Capacitance
-V
GS
- Gate-Source Voltage (V)
6000
10
9
8
7
6
5
4
3
2
1
0
0
50
Gate Charge
VDS=-80V
IDS=-60A
C - Capacitance (pF)
Frequency=1.0MHz
4500
Ciss
3000
1500
Coss
Crss
1
10
100
0
-V
DS
- Drain-Source Voltage (V)
100
150
200
Q
G
- Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
www.ruichips.com
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