RU6085H
N-Channel Advanced Power MOSFET
Features
• 60V/80A,
R
DS (ON)
=6mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=6.5mΩ(Typ.)@V
GS
=4.5V
Pin Description
• Super High Dense Cell Design
• Ultra Low On-Resistance
• Fast Switching Speed
• Lead Free and Green Devices Available (RoHS Compliant)
SOP-8
Applications
• Power Management.
• Switch Applications.
• Load switch
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
A
=25°C
60
±20
150
-55 to 150
20
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
①
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
320
80
50
2.5
1.6
-
50
A
A
②
P
D
R
JC
R
JA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
W
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
1
www.ruichips.com
RU6085H
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU6085H
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
DS
=60V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=12A
60
1
30
1
1.6
3
±100
6
6.5
7
8
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=20A, V
GS
=0V
I
SD
=20A, dl
SD
/dt=100A/µs
38
72
1.2
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
1.2
3450
310
115
28
Ω
pF
V
DD
=30V,I
DS
=20A,
V
GEN
=10V,R
G
=4.7Ω
32
98
68
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=48V, V
GS
=10V,
I
DS
=20A
75
19
26
nC
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature. The package
limitation current is 20A.
③When
mounted on 1 inch square copper board, t≤10sec.
④Limited
by TJmax. Starting TJ = 25°C.
⑤Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed
by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
2
www.ruichips.com
RU6085H
Ordering and Marking Information
Device
RU6085H
Marking
RU6085H
Package
SOP-8
Packaging Quantity Reel Size Tape width
Tape&Reel
2500
13’’
12mm
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
3
www.ruichips.com
RU6085H
Typical Characteristics
V
GS
=10V
R
DS(ON)
limited
I
DS
=20A
10µs
100µs
1ms
DC
T
A
=25°C
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
Single Pulse
R
θJA
=50
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
4
www.ruichips.com
RU6085H
Typical Characteristics
Vgs=8,9,10V
5V
4.5V
3V
2V
10V
V
GS
=10V
I
DS
=20A
T
J
=150°C
T
J
=25°C
T
J
=25°C
Rds(on)=6.3mΩ
Frequency=1.0MHz
V
DS
=48V
I
DS
=20A
Ciss
Coss
Crss
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
5
www.ruichips.com
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