RU4099R
N-Channel Advanced Power MOSFET
Features
Pin Description
·
40V/200A
R
DS
(ON)
=2.8mΩ(Typ.) @ V
GS
=10V
·
Avalanche Rated
·
Reliable and Rugged
·
Lead Free and Green Devices Available
Applications
TO-220
·
Automotive applications and a wide
variety of other applications
·
High Efficiency Synchronous in SMPS
·
High Speed Power Switching
Absolute Maximum Ratings
Symbol
Parameter
N-Channel MOSFET
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
40
±25
175
-55 to 175
200
①
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
800
200
②
①
①
A
140
300
0.5
W
150
°C/W
mJ
Drain-Source Avalanche Ratings
E
AS
③
Avalanche Energy ,Single Pulsed
1400
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –NOV., 2012
www.ruichips.com
RU4099R
Electrical Characteristics
Parameter
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
A
=25°C Unless Otherwise Noted)
RU4099R
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 40V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
40
1
30
2
3
4
±100
2.8
3.5
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
④
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40A, V
GS
=0V
74
I
SD
=40A, dl
SD
/dt=100A/µs
148
1.2
V
ns
nC
Reverse Recovery Charge
⑤
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.4
5750
1400
480
21
Ω
pF
V
DD
=35V, R
L
=35Ω,
I
DS
= 1A, V
GEN
= 10V,
R
G
=6Ω
37
ns
75
115
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=30V, V
GS
= 10V,
I
DS
=40A
154
44
47
nC
①Calculated
continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
②Pulse
width limited by safe operating area.
③Limited
by T
Jmax
, I
AS
=30A, V
DD
= 48V, R
G
= 47Ω , Starting T
J
= 25°C.
④Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed
by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
2
www.ruichips.com
RU4099R
Typical Characteristics
Power Dissipation
Drain Current
I
D
- Drain Current (A)
Tj - Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
I
D
- Drain Current (A)
Ptot - Power (W)
3
www.ruichips.com
RU4099R
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
RDS(ON) - On - Resistance (MR)
VGS - Gate - Source Voltage (V)
Normalized Threshold Vlotage
Tj - Junction Temperature (°C)
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
4
www.ruichips.com
RU4099R
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –NOV., 2012
5
www.ruichips.com
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