RU30P3B
P-Channel Advanced Power MOSFET
Features
• -30V/-3.5A,
R
DS (ON)
=50mΩ(Typ.)@V
GS
=-10V
R
DS (ON)
=80mΩ(Typ.)@V
GS
=-4.5V
D
Pin Description
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
SOT23
Applications
• Load Switch
D
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
A
=25°C
-30
V
±20
150
-55 to 150
-1
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
①
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=-10V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
-14
-3.5
A
A
②
-2.8
1
W
0.64
-
125
°C/W
°C/W
P
D
R
θJC
R
θJA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com
RU30P3B
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU30P3B
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=-250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
DS
=-30V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
=-3.5A
V
GS
=-4.5V, I
DS
=-2.8A
-30
-1
-30
-1
-1.6
-2.5
±100
50
80
80
130
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=-1A, V
GS
=0V
I
SD
=-3.5A, dl
SD
/dt=100A/µs
7
3
-1.2
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
0.6
550
95
50
5
Ω
pF
V
DD
=-15V, I
DS
=-3.5A,
V
GEN
=-10V,R
G
=6Ω
13
25
9
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-24V, V
GS
=-10V,
I
DS
=-3.5A
12
1.3
2.5
nC
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature.
③When
mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited
by T
Jmax.
Starting T
J
= 25°C.
⑤Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed
by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
2
www.ruichips.com
℃
RU30P3B
Ordering and Marking Information
Device
RU30P3B
Marking
①
DXYWW
Package
SOT23
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
7’’
8mm
①
The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
3
www.ruichips.com
℃
RU30P3B
Typical Characteristics
2
Power Dissipation
4
Drain Current
P
D
- Power (W)
-I
D
- Drain Current (A)
3
1
2
1
VGS=-10V
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
Safe Operation Area
100
Drain Current
300
250
200
150
100
50
0
Ids=-3.5A
-I
D
- Drain Current (A)
R
DS(ON)
limited
10
1
10µs
100µs
1ms
10ms
DC
0.1
0.01
T
A
=25°C
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
-V
DS
- Drain-Source Voltage (V)
-V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJA - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.1
R
θJA
=
125°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
4
www.ruichips.com
℃
RU30P3B
Typical Characteristics
15
Output Characteristics
300
Drain-Source On Resistance
-I
D
- Drain Current (A)
-10V
12
-6V
-4.5V
9
6
-3V
R
DS(ON)
- On Resistance (mΩ)
-8V
250
200
150
-4.5V
-10V
50
0
0
2
4
6
8
10
100
3
-1V
0
0
1
2
3
4
5
-V
DS
- Drain-Source Voltage (V)
2.5
-I
D
- Drain Current (A)
10
Drain-Source On Resistance
V
GS
=-10V
I
D
=-3.5A
Source-Drain Diode Forward
Normalized On Resistance
-I
S
- Source Current (A)
2.0
1
1.5
T
J
=150°C
0.1
1.0
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=50mΩ
0.0
-50
-25
0
25
50
75
100
125
150
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (°C)
-V
SD
- Source-Drain Voltage (V)
Capacitance
-V
GS
- Gate-Source Voltage (V)
1000
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
VDS=-24V
IDS=-3.5A
C - Capacitance (pF)
Frequency=1.0MHz
800
600
Ciss
400
200
Coss
Crss
1
10
100
0
-V
DS
- Drain-Source Voltage (V)
5
10
15
Q
G
- Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
www.ruichips.com
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