RU3060L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/53A,
R
DS (ON)
=9mΩ(tpy.)@V
GS
=10V
R
DS (ON)
=13mΩ(tpy.)@V
GS
=4.5V
•
Super High Dense Cell Design
•
Reliable and Rugged
•
Fast Switching and Fully Avalanche Rated
Pin Description
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
•
Power Management in Desktop
Computer, Portable Equipment and
DC/DC Converters.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
±20
175
-55 to 175
T
C
=25°C
53
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
212
53
A
A
②
41
50
25
3
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
110
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D– MAY., 2012
www.ruichips.com
RU3060L
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
A
=25°C Unless Otherwise Noted)
RU3060L
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 30V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
= 10V, I
DS
=30A
V
GS
= 4.5V, I
DS
=25A
30
1
30
1.4
-
2.7
±100
9
13
13
23
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=30A, V
GS
=0V
I
SD
=30A, dl
SD
/dt=100A/µs
24
16
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
1.2
780
190
70
6
V
DD
=20V, R
L
=15Ω,
I
DS
=30A, V
GEN
= 10V,
R
G
=6Ω
8
20
4
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=20V, V
GS
= 10V,
I
DS
=30A
15
2.5
4
20
nC
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Current limited by
bond wire.
Limited by T
Jmax
, I
AS
=21A, V
DD
= 20V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev.D– MAY., 2012
2
www.ruichips.com
RU3060L
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev.D– MAY., 2012
I
D
- Drain Current (A)
www.ruichips.com
RU3060L
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev.D– MAY., 2012
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
R
DS(ON)
- On - Resistance (m)
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RU3060L
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev.D– MAY., 2012
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
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