RU30L30M
P-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-30A,
R
DS (ON)
=12mΩ(Typ.)@V
GS
=-10V
R
DS (ON)
=20mΩ(Typ.)@V
GS
=-4.5V
•
Super High Dense Cell Design
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN3333
Applications
•
Power Management
• Load
Switching
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
P-Channel MOSFET
Rating
-30
±20
150
-55 to 150
T
C
=25°C
-30
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
I
D
Continuous Drain Current(V
GS
=-10V)
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
P
D
Maximum Power Dissipation
T
C
=100°C
T
A
=25°C
T
A
=70°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
-96
-30
②
①
①
③
③
A
A
-19
-9.3
-7.5
33
13
3.5
2.3
W
③
③
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RU30L30M
Mounted on Large Heat Sink
R
θJC
R
θJA
③
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
3.8
35
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
42
mJ
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
(T
C
=25°C Unless Otherwise Noted)
RU30L30M
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
=-30V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
=-20A
V
GS
=-4.5V, I
DS
=-16A
-30
-1
-30
-1
-
-2.5
±10
12
20
20
34
V
µA
V
µA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=-1A, V
GS
=0V
I
SD
=-20A, dl
SD
/dt=100A/µs
45
26
-1
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
1.8
2300
250
160
17
32
37
15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
DD
=-15V, R
L
=0.75Ω,
I
DS
=-20A, V
GEN
=-10V,
R
G
=6Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
42
V
DS
=-24V, V
GS
=10V,
I
DS
=-20A
9
13
nC
Gate-Source Charge
Gate-Drain Charge
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
2
www.ruichips.com
RU30L30M
Notes:
①
Max current is limited by the source bonding.
②
Pulse width limited by safe operating area.
③
When mounted on 1 inch square copper board, t
≤10sec.
④
Limited by T
Jmax
, I
AS
=13A, V
DD
=-24V, R
G
= 50Ω , Starting T
J
= 25°C.
⑤
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑥
Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
RU30L30M
Marking
30L30
Package
PDFN3333
Packaging
Tape&Reel
Quantity
5000
Reel Size
13’’
Tape width
12mm
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
3
www.ruichips.com
RU30L30M
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
-I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
4
Normalized Effective Transient
Square Wave Pulse Duration (sec)
-I
D
- Drain Current (A)
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RU30L30M
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
-V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
-V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
5
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
R
DS(ON)
- On - Resistance (m)
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