RU20P3B
P-Channel Advanced Power MOSFET
MOSFET
Features
• -20V/-3A,
R
DS (ON)
=80
mΩ
(Typ.) @ V
GS
=-4.5V
R
DS (ON)
=110
mΩ
(Typ.) @ V
GS
=-2.5V
• Low
R
DS (ON)
• Super High Dense Cell Design
•
Reliable and Rugged
Pin Description
SOT-23
• Lead Free and Green Available
Applications
•
Power Management
•
Load Switch
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
P-Channel MOSFET
Rating
-20
±12
150
-55 to 150
T
A
=25°C
-1.2
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=-4.5V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
P
D
R
θJA
②
-12
A
A
-3
-2.3
1
0.64
125
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com
RU20P3B
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU20P3B
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
=-20V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-3A
V
GS
=-2.5V, I
DS
=-2A
-20
-1
-30
-0.5
-
-1
±100
80
110
100
150
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=-1A, V
GS
=0V
I
SD
=-3A, dl
SD
/dt=100A/µs
13
6
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
2
480
120
40
8
V
DD
=-10V, R
L
=3Ω,
I
DS
=-3A, V
GEN
=-4.5V,
R
G
=6Ω
13
25
12
-1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-16V, V
GS
=-4.5V,
I
DS
=-3A
7
1.5
2.5
nC
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
The value in any given application depends on
the user's specific board design.
③Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
2
www.ruichips.com
RU20P3B
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
-I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
-I
D
- Drain Current (A)
RU20P3B
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
-V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
-V
GS
- Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
4
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
www.ruichips.com
R
DS(ON)
- On - Resistance (m)
RU20P3B
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
-I
S
- Source Current (A)
-V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
5
-V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
www.ruichips.com
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