PNM723T703E0-2
N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
MOSFET Product Summary
V
DS
(V)
40
R
DS(on)
(Ω)
7.5@ V
GS
=10V
V
GS(th)
(V)
0.5 to 1.5
I
D
(A)
0.18
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D
=10μA,V
GS
=0V
V
DS
=40V,V
GS
=0V
V
DS
=0V,V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=5V, I
D
=0.05A
V
GS
=10V, I
D
=0.5A
40
-
-
0.5
-
-
-
-
-
-
-
-
-
0.5
±10
1.5
7.5
7.5
V
μA
μA
V
Ω
Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
DSS
C
RSS
V
GS
=0V, V
DS
=25V,
f=1MHz
-
-
-
-
-
-
40
20
5
pF
pF
pF
SWITCHING PARAMETERS
Turn-On Delay Time
Turn-Off Delay Time
t
d(on)
t
d(off)
V
DS
=30V, V
GS
=10V,
R
G
=25Ω, R
L
=150Ω
I
D
=0.2A
-
-
-
-
20
20
ns
ns
Rev.06.2
1
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N-Channel MOSFET
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
T
A
=25℃
PNM723T703E0-2
Symbol
V
DS
V
GS
I
D
I
D
P
D
Value
40
±20
0.18
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
1.0
1.0
0.8
I
D
– Drain Current (A)
V
GS
=6.0V
I
D
– Drain Current (A)
T=25°
C
0.8
0.6
0.6
T=55°
C
V
GS
=4.5V
0.4
0.4
T=125°
C
0.2
0.2
V
GS
=3.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain Source Voltage (V)
V
GS
– Gate to Source Voltage (V)
Fig 1. Output Characteristics
6
r
DS(on)
– On-Resistance (Ω)
80
Fig 2. Transfer Characteristics
5
V
GS
=3.0V
60
(pF)
C
iss
4
3
V
GS
=7.0V
C – Capacitance
40
2
V
GS
=11.5V
1
20
C
Oss
C
Rss
0
4
8
12
16
20
0.0
0
0.2
0.4
0.6
0.8
1.0
0
I
D
– Drain Current (A)
V
DS
– Drain Source Voltage (V)
Fig 3. On-Resistance vs. Drain Current
Rev.06.2
2
Fig 4. Capacitance
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N-Channel MOSFET
PNM723T703E0-2
IMPORTANT NOTICE
and
are registered trademarks of
Pri semi Electronics Co., Ltd (Prisemi)
,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does P risemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for eac h customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed t o be used wit h ordinary electronic equipment or devices, Should you
intend to use thes e products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospac e machin ery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
Rev.06.2
4
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