SMBJ SERIES
Surface Mount Unidirectional and Bidirectional Transient Voltage Suppressors
Features
Fast response time: typically less than 1ps from 0
Peak power dissipation 600W @10 x 1000 us
Mechanical Characteristics
CASE: SMB (DO-214AA) Molded Plastic over glass
passivated junction.
Mounting Position: Any
Polarity: by cathode band denotes uni-directional
device, none cathode band denotes bi-directional
device.
Terminal: Solder plated
Typical IR less than 1uA when VBR min above
IEC 61000-4-
ESD protection of data lines in accordance with IEC
61000-4-
EFT protection of data lines in accordance with IEC
61000-4-
Halogen free and
Lead-free finish
SMB
Ordering Information
Device
SMBJxxA(CA)
Qty per Reel
3000
Reel Size
13Inch
Uni-directional
Bi-directional
Absolute Maximum Ratings (TA=25° unless otherwise specified)
C
Characteristics
Peak Power Dissipation At T
j
= 25℃, T
p
= 1ms (Note 1,2 )
Peak Forward Surge Current 8.3ms single half sine-wave super
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Notes:
Non-repetitive current pulse, per Fig.3 and derated above TA=25° per Fig.2.
C
Mounted on 5.0x5.0mm2 (0.03mm thick) Copper Pads to each terminal.
Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only.
Symbols
P
PK
I
FSM
T
L
T
J
T
STG
Value
600
100
260 (10 sec.)
-55 to +155
-55 to +175
Unit
W
A
0
0
0
C
C
C
Rev.01.1706
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SMBJ SERIES
SMBJ
PART NUMBER
Uni-polar
SMBJ100A
SMBJ110A
SMBJ120A
SMBJ130A
SMBJ150A
SMBJ160A
SMBJ170A
SMBJ180A
SMBJ190A
SMBJ200A
SMBJ210A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
MARKING
CODE
Uni
NZ
PE
PG
PK
PM
PP
PR
PT
PV
PX
PZ
QE
QG
QK
QM
QP
QR
V
RWM
(V)
100
110
120
130
150
160
170
180
190
200
210
220
250
300
350
400
440
V
BR
@ I
T
(V)
Min
111
122
133
144
167
178
189
200
211
222
233
244
278
333
389
444
489
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
I
R
@
V
RWM
(uA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
C
(Max)
(V)
162
177
193
209
243
259
275
290
306
322
339
355
403
484
565
645
710
I
PP
(Max)
(A)
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.5
1.2
1.1
0.9
0.8
Bi-polar
SMBJ100CA
SMBJ110CA
SMBJ120CA
SMBJ130CA
SMBJ150CA
SMBJ160CA
SMBJ170CA
SMBJ180CA
SMBJ190CA
SMBJ200CA
SMBJ210CA
SMBJ220CA
SMBJ250CA
SMBJ300CA
SMBJ350CA
SMBJ400CA
SMBJ440CA
Bi
DZ
EE
EG
EK
EM
EP
ER
ET
EV
EX
EZ
FE
FG
FK
FM
FP
FR
Max
128.0
140.5
153.0
165.5
192.5
205.0
217.5
230.4
243.2
256.0
268.8
281.6
309.0
371.0
432.0
494.0
543.0
I-V Curve Characteristics
V
F
I
Symbol
V
RWM
V
BR
V
C
I
T
I
R
I
PP
Parameter
Working Peak Reverse Voltage
Breakdown Voltage @ I
T
Clamping Voltage @ I
PP
Test Current
Leakage current at V
RWM
Peak pulse current
I
PP
V
C
V
BR
V
RWM
I
R
I
T
I
F
V
P
PPM
V
BR
I
R
V
F
Peak Pulse Power Dissipation
– Max power dissipation
Breakdown Voltage
– Maximum voltage that flows though the TVS at a specified current (IT)
Reverse Leakage Current
– Current measured at VR
Forward Voltage
–
Drop for Uni-directional
V
RWM
Reverse Stand-off Voltage
– Maximum voltage that can be applied to TVS without operation
V
C
Clamping Voltage
– Peak voltage measured across the TVS at a specified IPPM (peak impulse current)
Rev.01.1706
Copyright © 2014 PN-Silicon Co., Ltd
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SMBJ SERIES
Typical Performance Characteristics (T
A
=25° unless otherwise Specified)
C
Peak Pulse Power(P
pp
)or Current(I
pp
)
100
100
Derating Percentage %
Peak Power_Ppp(kW)
150
75
10
100
50
0
50
1
25
0.1
0.1
1
10
100
0
0
25
50
75
100
125
150
175
Tj-Initial Temperature
Pulse Duration_tp(μS)
Peak Pulse Power vs. Pulse Time
Fig.2 - Pulse Derating Cure
150
Ipp-Peak Pulse current（%）
Cj-Junction Capacitance(pF)
0 10
1000
2000
t-Time(μs)
3000
4000
10000
100
1000
50
100
0
10
1
10
100
1000
V
BR
- Reverse Breakdown Voltage(V)
Fig.4 – Typical Junction Capacitance
Fig.3 – Pulse Waveform
Rev.01.1706
Copyright © 2014 PN-Silicon Co., Ltd
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