LSGC085R065W3\LSGE085R065W3\LSGN085R065W3
Lonten N-channel 85 V, 80A, 6.5mΩ Power MOSFET
Features
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Product Summary
V
DS
R
DS(on)
I
D
85V
6.5mΩ
80A
100% Avalanche Tested
D
G
S
TO-220
TO-263
DFN5×6
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
114
80
72
320
272
±20
138
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
85
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 35A, VGS = 10V. EAS(max)=1089mJ under
IAS(max)=66A and above Conditions;
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Version 1.2,Jan-2020
1
Symbol
R
thJC
R
thJA
Max
0.90
80
Unit
°C/W
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LSGC085R065W3\LSGE085R065W3\LSGN085R065W3
Package Marking and Ordering Information
Device
LSGC085R065W3
LSGE085R065W3
LSGN085R065W3
Device Package
TO-220
TO-263
DFN5×6
Marking
LSGC085R065W3
SGE085R065W3
SG085R065W3
Electrical Characteristic
Parameter
(at Tj = 25 °C, unless otherwise specified)
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
BV
DSS
V
GS(th )
85
2
99
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=85V,V
GS
=0V
I
DSS
-
-
I
GSS
R
DS(on)
g
fs
-
0.02
-
10
1
10
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V, I
D
=50A
-
-
5.7
68
6.5
-
mΩ
S
TO-220
V
DS
=5V,I
D
=40A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
3190
601
28
55
17
14
22
30
84
32
2.5
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
Vds=42.5V
Id=30A Rg=5Ω
Vgs=10V;
(Note 2,3)
nC
pF
V
GS
=0V, V
DS
=42.5V,
f=1MHz
V
GS
=10V, V
DS
=42.5V,
I
D
=30A, f=1MHz
Version 1.2,Jan-2020
2
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LSGC085R065W3\LSGE085R065W3\LSGN085R065W3
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.9
78
44
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=50A
V
SD
t
rr
Q
rr
IS=30A, VGS=0V,
dIF/dt=100A/us;
※.
Notes
2.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
3.Essentially independent of operating temperature.
Version 1.2,Jan-2020
3
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LSGC085R065W3\LSGE085R065W3\LSGN085R065W3
Typical Performance Characteristics
Fig 1: Output Characteristics
Fig 2: Transfer Characteristics
Common Source
T
c
= 25°C
Pulse test
Figure 3. Capacitance Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
T
c
=125°C
T
c
= 25°C
Version 1.2,Jan-2020
4
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LSGC085R065W3\LSGE085R065W3\LSGN085R065W3
Fig 8: Rdson-Junction Temperature(℃)
Fig 7: Rds(on) vs Gate Voltage
Figure 9. Maximum Safe Operating Area
10us
100us
Limited by R
DS(on)
DC
1ms
10ms
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Figure 10. Normalized Maximum Transient Thermal Impedance (RthJC)
Version 1.2,Jan-2020
5
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