LNN06R140
Lonten N-channel 60V, 43A, 14mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
60V
14mΩ
43A
Pin Configuration
Features
60V,43A,R
DS(ON).max
=14mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
DFN5
×
6
G
S
N-Channel MOSFET
Pb
Applications
Motor Drives
UPS
DC-DC Converter
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
Continuous drain current ( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
60
43
27
172
±20
56
50
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
2.5
Unit
°C/W
Version 1.1,Jan-2020
1
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Package Marking and Ordering Information
Device
LNN06R140
Device Package
DFN5×6
LNN06R140
Marking
LNN06R140
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
T
J
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSSF
I
GSSR
R
DS(on)
g
fs
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=60V, V
GS
=0V, T
J
= 25°C
V
DS
=48V, V
GS
=0V, T
J
= 125°C
V
GS
=20V, V
DS
=0 V
V
GS
=-20V, V
DS
=0 V
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
V
DS
=5V , I
D
=20A
Min.
60
0.9
---
---
---
---
---
---
---
Typ.
---
1.4
---
---
---
---
10
11.5
86
Max.
---
1.9
1
30
100
-100
14
15
---
Unit
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 30V,V
GS
=15V, I
D
=20A
V
DS
= 25V, V
GS
= 0V,
F = 1MHz
---
---
---
---
---
---
---
---
2320
168
128
18.5
16.1
107.6
55.7
1.84
---
---
---
---
---
---
---
---
Ω
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=30V, I
D
=20A,
V
GS
= 10V
---
---
---
10
8.1
50
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
3)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=20A, T
J
=25℃
I
S
=20A,di/dt=100A/us, T
J
=25℃
---
---
---
---
---
---
---
---
38.2
32.5
43
172
1.2
---
---
A
A
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=25V, V
GS
=10V, L=0.5mH, I
AS
=15A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 1.1,Jan-2020
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Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
V
GS
=3.5V,4.5V,6.5V,8V,10V
From Bottom to Top
Common Source
T
c
= 25°C
Pulse test
Common Source
V
DS
=5 V
Pulse test
LNN06R140
Figure 2. Transfer Characteristics
V
GS
=3V
T
c
=125°C
V
GS
=2.5V
T
c
= 25°C
V
GS
=2V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. Capacitance
Characteristics
Figure 4. Gate Charge Waveform
Ciss
V
gs
= 10 V
V
ds
= 30 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes:
f = 1 MHz
V
GS
=0 V
I
D
= 20 A
Coss
Crss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
T
c
=125°C
V
GS
= 4.5V
T
c
= 25°C
V
GS
= 10V
Source-Drain Voltage V
SD
(V)
Drain Current I
D
(A)
Version 1.1,Jan-2020
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LNN06R140
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
100us
V
GS
= 10V
I
D
= 20A
Limited by R
DS(on)
DC
1ms
10ms
Notes:
T = 25°C
T = 150°C
Single Pulse
j
A
T -Junction Temperation (
°C
)
J
Drain-Source Voltage V
DS
(V)
Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC)
In descending oder
D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
Single Pulse
J,PK
=T +P
C
DM
.Z
θJC
.R
θJC
R
θJC
=2.5℃/W
Pulse Width t (s)
Version 1.1,Jan-2020
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Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
LNN06R140
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.1,Jan-2020
5
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